Blueprint of a Scalable Spin Qubit Shuttle Device for Coherent Mid-Range Qubit Transfer in Disordered

V Langrock, JA Krzywda, N Focke, I Seidler… - PRX Quantum, 2023 - APS
Silicon spin qubits stand out due to their very long coherence times, compatibility with
industrial fabrication, and prospect to integrate classical control electronics. To achieve a …

Robust technology computer-aided design of gated quantum dots at cryogenic temperature

F Beaudoin, P Philippopoulos, C Zhou… - Applied physics …, 2022 - pubs.aip.org
We present non-linear Poisson and Schrödinger simulations of an industrially fabricated
gated quantum dot device at 100 mK using the Quantum-Technology Computer-Aided …

Low charge noise quantum dots with industrial CMOS manufacturing

A Elsayed, M Shehata, C Godfrin, S Kubicek… - arXiv preprint arXiv …, 2022 - arxiv.org
Silicon spin qubits are among the most promising candidates for large scale quantum
computers, due to their excellent coherence and compatibility with CMOS technology for …

A co-simulation methodology for the design of integrated silicon spin qubits with their control/readout cryo-cmos electronics

B Gys, R Acharya, S Van Winckel… - IEEE Journal on …, 2022 - ieeexplore.ieee.org
Recent years have witnessed a steady growth in the achievable quantum systems due to
advancements in qubit technology across several hardware platforms. Currently entering an …

Scalable on-chip multiplexing of low-noise silicon electron and hole quantum dots

H Bohuslavskyi, A Ronzani, J Hätinen, A Rantala… - arXiv preprint, 2022 - cris.vtt.fi
The scalability of the quantum processor technology is elemental in reaching fault-tolerant
quantum computing. Owing to the maturity of silicon microelectronics, quantum bits (qubits) …

[HTML][HTML] Towards scalable cryogenic quantum dot biasing using memristor-based DC sources

PA Mouny, R Dawant, P Dufour, M Valdenaire… - Cryogenics, 2024 - Elsevier
Cryogenic memristor-based DC sources offer a promising avenue for in situ biasing of
quantum dot arrays. In this study, we present experimental results and discuss the scaling …

Analysis and 3D TCAD simulations of single-qubit control in an industrially-compatible FD-SOI device

P Philippopoulos, F Beaudoin, P Galy - Solid-State Electronics, 2024 - Elsevier
In this study, 3D simulations are introduced to analyze electric-dipole spin resonance
(EDSR) for a spin qubit defined in a 28 nm-node Ultra-Thin Body and Buried oxide (UTBB) …

Understanding The Transistor Behavior of Electron-Spin Qubits Above Cryogenic Temperatures

F Lorenzelli, C Godfrin, M Stucchi, A Grill… - IEEE Electron …, 2024 - ieeexplore.ieee.org
Electron-spin qubits are among the most promising platforms for the realization of a large-
scale quantum computer. Physical limitations dictate their operation at cryogenic …

Minimal evolution times for fast, pulse-based state preparation in silicon spin qubits

CK Long, NJ Mayhall, SE Economou, E Barnes… - arXiv preprint arXiv …, 2024 - arxiv.org
Standing as one of the most significant barriers to reaching quantum advantage, state-
preparation fidelities on noisy intermediate-scale quantum processors suffer from quantum …

[PDF][PDF] Charge trapping and variability in CMOS technologies at cryogenic temperatures

J Michl - 2022 - scholar.archive.org
CMOS technology operated at cryogenic temperatures is essential in various fields such as
quantum computing (QC), where it serves as a classical control interface for qubits operating …