Progress in monolithic integration of III-V semiconductor heterostructures on silicon
promotes the development of silicon-based integrated optoelectronics. Here, we report on …

We investigated the chemical beam epitaxy of GaP 1− x N x grown on nominally (001)-
oriented Si substrates, as desired for the lattice-matched integration of optoelectronic …

This study presents a new model for point-defect modification in III-VN alloys through first-
principle calculations and several validation experiments conducted in our previous study …

The electronic band structure of phosphorus-rich GaNxPyAs1− x− y alloys (x~ 0.025 and y≥
0.6) is studied experimentally using optical absorption, photomodulated transmission …

Dilute nitrides lattice-matched to GaP were studied to explore the possibilities to improve
their properties by additional indium or arsenic content in the GaPN alloy for further …

This study presents two-wavelength excited photocurrent (TWEPC) measurements in GaP
1− x N x grown by metalorganic vapor phase epitaxy. TWEPC measurements reveal that …

The optical properties of GaAsN system alloys have not been clarified, particularly for the
localized level around the bottom of the conduction band induced by nitrogen atoms. Herein …

This paper presents the impact of temperature and nitrogen-composition on the growth
mode and crystallinity of GaAsPN alloys. Reflection high-energy electron diffraction results …

This study presents the positive effects of proton/electron irradiation on the crystallinity of
GaP-based dilute nitride alloys. It is found that proton/electron irradiation followed by rapid …

The effect of rapid thermal annealing on the electrical properties of p++ GaP/p− GaAsPN/n+
GaP diodes were investigated by using current-voltage (IV), capacitance-voltage (CV) and …