A novel GaSb/GaAs type-II heterojunction TFET on SELBOX substrate (HJ-STFET)-based dielectric-modulated ultrasensitive label-free biosensor has been demonstrated in this …
P Ghosh, B Bhowmick - … of RF and Microwave Computer‐Aided …, 2020 - Wiley Online Library
This work explores the temperature associated reliability issues of selective buried oxide (SELBOX) TFET. The proposed device is optimized for maximum ION/IOFF ratio considering …
In this work, a device called pocket doped junctionless tunnel field‐effect transistor (JL‐ TFET) for digital inverter application is proposed. The operation of this device is subjected to …
This manuscript reports the back-gate effects on device-level performance of a heterojunction TFET on SELBOX substrate (HJ-STFET). The proposed structure implements …
This paper reports the TCAD based investigation of the DC/RF and linearity characteristics of a newly proposed dual-material (DM) laterally-stacked (LS) SiO 2/HfO 2 heterojunction …
This paper investigates the trap analysis of a double-gate extended-source tunnel field- effect transistor (DG-ESTFET) and single-gate extended-source tunnel field-effect transistor …
In this paper, we have studied and proposed a planar Tunnel FET device with source side SiGe pocket and hetero-gate dielectric structure that works by utilizing quantum mechanical …
This paper presents a novel nanoscale tunnel FET consisting of an Esaki tunneling diode in the source region. A unique part of the source region is replaced by a heavily doped N-type …
This paper reports a method to suppress the ambipolar effect and enhance the on-state current in Tunnel Field Effect Transistor by exploiting the advantages of Silicon-Germanium …