We survey progress in the 3D cross-point phase-change memory (PCM) field over recent
years, starting from the choice of 3D-capable access devices to candidate Ovonic threshold …

Today's explosion of data urgently requires memory technologies capable of storing large
volumes of data in shorter time frames, a feat unattainable with Flash or DRAM. Intel Optane …

Memristor-integrated passive crossbar arrays (CAs) could potentially accelerate neural
network (NN) computations, but studies on these devices are limited to software-based …

Fifty years after its discovery, the ovonic threshold switching (OTS) phenomenon, a unique
nonlinear conductivity behavior observed in some chalcogenide glasses, has been recently …

Resistive random-access memory (RRAM) crossbar arrays have shown significant promise
as drivers of neuromorphic computing, in-memory computing, and high-density storage …

In this letter, we fabricated a C-doped GeTe x Ovonic threshold switching (OTS) selector in a
via-hole structure. The material composition is simple without toxic element doping …

With rapid advancement and deep integration of artificial intelligence and the internet-of-
things, artificial intelligence of things has emerged as a promising technology changing …

Cross-point array architecture offers a path toward low-cost storage-class memory (SCM).
However, it requires a selector, such as an ovonic threshold switch (OTS) in series with the …

Phase‐change random access memory is anticipated to break the bottleneck of the “storage
wall” due to its advantages in simultaneous data storage and in‐memory computing …

The ever-increasing volume of complex data poses significant challenges to conventional
sequential global processing methods, highlighting their inherent limitations. This …