Miniaturization as well as manufacturing processes that electronics devices are subjected to
often results in to increase in operational parameters such as current density, temperature …

A powerful integrated fan-out (InFO) wafer level system integration (WLSI) technology has
been developed to integrate application processor chip with memory package for smart …

In this article, we will present recent advances in reliability effects such as electromigration
on interconnects and Negative/Positive Bias Temperature Instability (N/P BTI) effects on …

This chapter investigates in detail the actual low-level migration processes. A solid
grounding in the physics of electromigration (EM) and its specific effects on the interconnect …

Electromigration (EM) in very large scale integration (VLSI) interconnects has become one
of the major reliability issues for current and future VLSI technologies. However, existing EM …

3D integrated circuits (3D ICs) based on through-silicon vias (TSVs) have emerged as a
promising solution for overcoming interconnect and power bottlenecks in IC design …

In this paper, we present a novel and fast electromigration (EM) immortality check for
general multisegment interconnect wires. Instead of using current density as the key …

Vertically integrated circuits (3-D ICs) may revitalize Moore's law scaling which has slowed
down in recent years. 3-D stacking is an emerging technology that stacks multiple dies …

Electromigration (EM) is considered to be one of the most important reliability issues for
current and future ICs in 10nm technology and below. In this paper we focus on the EM …

As VLSI technology features are pushed to the limit with every generation and with the
introduction of new materials and increased current densities to satisfy the performance …