Development and Creation of a New Class of Graded-Gap Structures Based on Silicon with the Participation of Zn and Se Atoms
NF Zikrillaev, OB Tursunov, GA Kushiev - Surface Engineering and …, 2023 - Springer
The possibility of the formation of structures such as compounds of elements between
chalcogenides and the transition group of metals in the crystal lattice of silicon is studied …
chalcogenides and the transition group of metals in the crystal lattice of silicon is studied …
Liquid-phase epitaxy of the (Si2)1 − x − y (Ge2) x (GaAs) y substitutional solid solution (0 ≤ x ≤ 0.91, 0 ≤ y ≤ …
AS Saidov, SN Usmonov, MS Saidov - Semiconductors, 2015 - Springer
Abstract (Si 2) 1− x− y (Ge 2) x (GaAs) y substitutional solid solutions (0≤ x≤ 0.91, 0≤ y≤
0.94) are grown by liquid-phase epitaxy from a Pb-based solution-melt on Si substrates with …
0.94) are grown by liquid-phase epitaxy from a Pb-based solution-melt on Si substrates with …
Effect of injection depletion in pn heterostructures based on solid solutions (Si 2) 1− x− y (Ge 2) x (GaAs) y,(Si 2) 1− x (CdS) x,(InSb) 1− x (Sn 2) x, and CdTe 1− x S x
SN Usmonov, AS Saidov, AY Leiderman - Physics of the Solid State, 2014 - Springer
The current-voltage characteristics of n-Si-p-(Si 2) 1− x− y (Ge 2) x (GaAs) y (0≤ x≤ 0.91,
0≤ y≤ 0.94), p-Si-n-(Si 2) 1− x (CdS) x (0≤ x≤ 0.01), n-GaAs-p-(InSb) 1− x (Sn 2) x (0≤ …
0≤ y≤ 0.94), p-Si-n-(Si 2) 1− x (CdS) x (0≤ x≤ 0.01), n-GaAs-p-(InSb) 1− x (Sn 2) x (0≤ …
Some electrical properties of p-Si–n-(Si2) 1-y (GaN) y structures obtained by epitaxy of (Si2) 1-y (GaN) y solid solutions on silicon substrates from liquid-phase
Solid solutions of molecular substitution (Si2) 1-y (GaN) y were grown from the liquid phase
of a tin solutionmelt. Single-crystal silicon washers of crystallographic orientation (111), 0.4 …
of a tin solutionmelt. Single-crystal silicon washers of crystallographic orientation (111), 0.4 …
Morphology and Current Transport in a Thin-Film Polycrystalline Au–ZnxCd1–xS–Mo Structure with Wide Photosensitivity Range in the Ultraviolet and Visible …
RR Kobulov, MA Makhmudov, SY Gerasimenko… - Applied Solar …, 2018 - Springer
Studies are carried out on the morphology of the surface and photovoltaic characteristics of
a thinfilm Au–Zn x Cd 1–x S–Mo structural injection photodetector with a wide …
a thinfilm Au–Zn x Cd 1–x S–Mo structural injection photodetector with a wide …
Structural Features of the Epitaxial Layer of the (GaAs) 1− y− z (Ge2) y (ZnSe) z Solid Solution Grown from a Bismuth Solution Melt
M Kalanov, S DV, SN Usmonov, E DA… - e-Journal of Surface …, 2024 - jstage.jst.go.jp
Accepted: 22 February, 2024; J-STAGE Advance Publication: 4 April, 2024; Published: 4
April, 2024 This paper presents the results of experimental studies of the structural …
April, 2024 This paper presents the results of experimental studies of the structural …
Influence of GaAs molecules on the photosensitivity of p Si–n (GaSb) 1–x (Si 2) x and n GaAs–p (InSb) 1–x (Sn 2) x heterostructures
SN Usmonov - Applied Solar Energy, 2016 - Springer
The spectral dependences of heterostructures p Si–n (GaSb) 1–x (Si 2) x (0≤ х≤ 0.07) and
n GaAs–p (InSb) 1–x (Sn 2) x (0≤ х≤ 0.05) alloyed by GaAs molecules are studied. The …
n GaAs–p (InSb) 1–x (Sn 2) x (0≤ х≤ 0.05) alloyed by GaAs molecules are studied. The …
Influence of GaAs molecules on the photosensitivity of pSi-n (GaSb)(Si) and nGaAs-p (InSb)(Sn) heterostructures.
S Usmonov - Applied Solar Energy (19349424), 2016 - search.ebscohost.com
The spectral dependences of heterostructures pSi-n (GaSb)(Si)(0≤ х≤ 0.07) and nGaAs-p
(InSb)(Sn)(0≤ х≤ 0.05) alloyed by GaAs molecules are studied. The ionization energy of …
(InSb)(Sn)(0≤ х≤ 0.05) alloyed by GaAs molecules are studied. The ionization energy of …
Liquid-phase Epitaxy of the [([Si. sub. 2]). sub. 1-xy][([Ge. sub. 2]). sub. x][(gaAs). sub. y] substitutional solid solution (0 [less than or equal to] x [less than or equal to] …
AS Saidov, SN Usmonov, MS Saidov - Semiconductors, 2015 - go.gale.com
[([Si. sub. 2]). sub. 1-xy][([Ge. sub. 2]). sub. x][(gaAs). sub. y] substitutional solid solutions (0
[less than or equal to] x [less than or equal to] 0.91, 0 [less than or equal to] y [less than or …
[less than or equal to] x [less than or equal to] 0.91, 0 [less than or equal to] y [less than or …
Effect of injection depletion in pn heterostructures based on solid solutions (Si)(Ge)(GaAs),(Si)(CdS),(InSb)(Sn), and CdTeS.
The current-voltage characteristics of n-Si-p-(Si)(Ge)(GaAs)(0≤ x≤ 0.91, 0≤ y≤ 0.94), p-Si-
n-(Si)(CdS)(0≤ x≤ 0.01), n-GaAs-p-(InSb)(Sn)(0≤ x≤ 0.05), and n-CdS-p-CdTe …
n-(Si)(CdS)(0≤ x≤ 0.01), n-GaAs-p-(InSb)(Sn)(0≤ x≤ 0.05), and n-CdS-p-CdTe …