Atomic layer deposition (ALD) is gaining attention as a thin film deposition method, uniquely suitable for depositing uniform and conformal films on complex three-dimensional …
M Leskelä, M Ritala - Thin solid films, 2002 - Elsevier
The principles of the atomic layer deposition (ALD) method are presented emphasizing the importance of precursor and surface chemistry. With a proper adjustment of the experimental …
GJ Derderian, GS Sandhu - US Patent 7,589,029, 2009 - Google Patents
(56) References Cited A method for growing films for use in integrated circuits using atomic layer deposition and a subsequent converting US PATENT DOCUMENTS step is described …
KY Ahn, L Forbes - US Patent 7,135,421, 2006 - Google Patents
A dielectric film containing HfAlO and a method of fabri cating Such a dielectric film produce a reliable gate dielectric having an equivalent oxide thickness thinner than attainable using …
KY Ahn, L Forbes - US Patent 7,183,186, 2007 - Google Patents
430. In an embodiment, the Zirconium-containing precursor is ZTB. In other embodiments, a Zirconium-containing pre cursor includes but is not limited to ZrCl and Zria. The ZTB …
KY Ahn - US Patent 6,852,167, 2005 - Google Patents
Integrated circuits, the key components in thousands of electronic and computer products, are generally built layer by layer on a silicon substrate. One common technique for forming …
D Panda, TY Tseng - Thin Solid Films, 2013 - Elsevier
In the advancement of complementary metal-oxide-semiconductor device technology, SiO2 was used as an outstanding dielectric and has dominated the microelectronics industry for …