Conventional silicon (Si)-based power devices face physical limitations—such as switching
speed and energy efficiency—which can make it difficult to meet the increasing demand for …

Field plate (FP) control of current collapse and channel electric field distribution in
AlGaN/GaN High Electron Mobility Transistors is investigated as a function of low-pressure …

One of the key challenges for the adoption of gallium nitride (GaN)-based heterostructure
field effect transistors (HFETs) in power-switching applications is obtaining enhancement …

GaN-based heterostructure FETs (HFETs) featuring a 2-D electron gas (2DEG) can offer
very attractive device performance for power-switching applications. This performance can …

Reliability enhancement of AlGaN/GaN HEMT is a significant thrust area due to rapidly
improving material and processing technology. In this paper, a detailed analysis of gate …

Alternative materials are currently considered to replace Si in diverse areas of solidstate
electronics. One of these areas is power-switching. By increasing the efficiency of power …

GaN-on-Si transistors are regarded as a candidate for future power-switching applications.
Beside the necessity to achieve enhancement mode behavior, on-resistance and maximum …

Electrical characterization of AlGaN/GaN heterojunctions isolated by Ar-implantation
identified three conduction regimes. These include an Ohmic regime below 100 V …

The liquid crystal mixture E7, based on cyanobiphenyl, has been successfully employed to
map electric field strength and distribution in AlGaN/GaN high electron mobility transistors …

Abstract GaN on SiC HEMTs fabricated with different gate-connected field plate structures
have been tested by means of RF reliability tests. The increase in field-plate length yielded …