Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective
Power semiconductor devices are fundamental drivers for advances in power electronics,
the technology for electric energy conversion. Power devices based on wide-bandgap …
the technology for electric energy conversion. Power devices based on wide-bandgap …
A tutorial on high-density power module packaging
Transportation electrification in many forms along with continued grid modernization efforts
is placing stringent requirements on volumetric and gravimetric power densities for power …
is placing stringent requirements on volumetric and gravimetric power densities for power …
Thermal Consideration and Design for a 200 kW SiC-Based High-Density Three-Phase Inverter in More Electric Aircraft
As advances in semiconductor, dielectric, and magnetic materials enhance the power
density of power conversion systems, the emphasis on efficient cooling solutions becomes …
density of power conversion systems, the emphasis on efficient cooling solutions becomes …
Experimental Characterization & Electro-Thermal Modeling of Double Side Cooled SiC MOSFETs for Accurate and Rapid Power Converter Simulations
The paper presents a precise and efficient model of Double-Side Cooled (DSC) SiC
MOSFET, which incorporates the dynamics of both electrical and thermal variables. It offers …
MOSFET, which incorporates the dynamics of both electrical and thermal variables. It offers …
Evaluation and efficiency comparison of soft-switching ARCP SiC-based traction inverters in electric vehicles
The hard-switching (HS) two-level (2-L) topology with no EMI filters dominates in traction
inverters for electric vehicles. Alternatively, by adopting the soft-switching (SS) auxiliary …
inverters for electric vehicles. Alternatively, by adopting the soft-switching (SS) auxiliary …
Substrate Embedded Power Electronics Packaging for Silicon Carbide MOSFETs
This article proposes a new power electronic packaging for discrete dies, namely, a
standard cell, which consists of a step-etched active metal brazing (AMB) substrate and a …
standard cell, which consists of a step-etched active metal brazing (AMB) substrate and a …
Mathematical Modeling of Drain Current Estimation in a CSDG MOSFET, Based on La2O3 Oxide Layer with Fabrication—A Nanomaterial Approach
N Gowthaman, VM Srivastava - Nanomaterials, 2022 - mdpi.com
In this work, three-dimensional modeling of the surface potential along the cylindrical
surrounding double-gate (CSDG) MOSFET is proposed. The derived surface potential is …
surrounding double-gate (CSDG) MOSFET is proposed. The derived surface potential is …
A MOSFET EMC modeling method based on electrical characteristic measurement and simplex optimization and particle swarm optimization
Z Pan, Y Liu, D Ren, X Zhao, J Yang… - … Journal of Circuit …, 2024 - Wiley Online Library
Metal oxide semiconductor field effect transistors (MOSFETs) are widely used in various
power electronic systems, and the establishment of the electromagnetic compatibility (EMC) …
power electronic systems, and the establishment of the electromagnetic compatibility (EMC) …
A Novel Double-sided Cooling Silicon Carbide Power Module with Ultra-low Parasitic Inductance Based on An Interleaved Power Loop
Y Yan, B Liu, J Lv, Z Zheng, J Liu… - IEEE Transactions on …, 2024 - ieeexplore.ieee.org
Higher switching speed requires power module package to have lower parasitic inductance.
This paper summarized three methods to realize low parasitic inductance. Based on these …
This paper summarized three methods to realize low parasitic inductance. Based on these …
One-step Method of Dynamic Capacitances Extraction from a SiC Power MOSFET in a Half-Bridge Package for EMI Analysis
The electromagnetic interference (EMI) and dynamic capacitance characteristics of metal-
oxide-semiconductor field-effect transistors (mosfets) are essential considerations in circuit …
oxide-semiconductor field-effect transistors (mosfets) are essential considerations in circuit …