[HTML][HTML] High-frequency non-invasive magnetic field-based condition monitoring of sic power mosfet modules

J Naghibi, K Mehran, MP Foster - Energies, 2021 - mdpi.com
Current distribution anomaly can be used to indicate the onset of package-related failures
modes in Silicon Carbide power MOSFET modules. In this paper, we propose to obtain the …

A new GMR sensor based on gradient magnetic field detection for DC and wide-band current measurement

P Fu, F Zheng - 2022 IEEE Region 10 Symposium (TENSYMP), 2022 - ieeexplore.ieee.org
The traditional isolating current detection method based on GMR can hardly meet the wide-
band DC current detection requirements in harsh environment. This paper proposes a …

On performance evaluation of high‐power, high‐bandwidth current measurement technologies for SiC switching devices

DA Philipps, D Peftitsis - IET Power Electronics, 2024 - Wiley Online Library
Silicon carbide (SiC) power metal‐oxide‐semiconductor field‐effect transistors (MOSFETs)
switch at an unprecedented speed, even at high currents. For accurate dynamic …

[PDF][PDF] High-Frequency Non-Invasive Magnetic Field-Based Condition Monitoring of SiC Power MOSFET Modules. Energies 2021, 14, 6720

J Naghibi, K Mehran, MP Foster - 2021 - kamyarmehran.eecs.qmul.ac.uk
Current distribution anomaly can be used to indicate the onset of package-related failures
modes in Silicon Carbide power MOSFET modules. In this paper, we propose to obtain the …

[图书][B] Multi-dimensional Point Magnetic Field Detection as the Basis for Integrated Current Sensing in Power Electronics

MH Alvi - 2020 - search.proquest.com
Increased power density and efficiency in power electronic systems require more compact
and low-power current sensing. During recent years, strides have been made in utilizing 1-D …