The quality of large semiconductor crystals grown from the melt for use in electronic and
optoelectronic devices is strongly influenced by the intricate coupling of heat and mass …

The Haasen model for plastic deformation by the formation of dislocations in diamond
structure semiconductor crystals is analyzed for thermal stress fields that are indicative of …

To effectively reduce dislocation by controlling the cooling process, the effect of cooling rate
on the activation of slip systems was studied in seed cast-grown monocrystalline silicon in …

A quasi-steady-state, integrated system model describing high temperature heat transfer,
solidification, and the action of capillarity in the Czochralski crystal growth process for silicon …

To effectively reduce dislocations during seeded growth of cylindrical monocrystalline-like
silicon by controlling the cooling flux, the relationship between the generation of dislocations …

Dislocation multiplication in single-crystal silicon during heating and cooling processes was
studied by three-dimensional simulation under accurate control of the temperature history …

The thermal stresses induced by temperature variations during steady-state growth of
semiconductor crystals cause plastic deformations within the crystal by dislocation motion …

Dislocation densities are generated in GaAs single crystals due to the excessive thermal
stresses induced by temperature variations during growth. A viscoplastic material model for …

Abstract The Alexander-Haasen (AH) model has been applied to analyze the plastic
deformation and dislocation generation during the crystal growth process of 4H-SiC (silicon …

A stress analysis that describes the crystal growing process requires a material model that is
valid over a wide temperature range and includes dislocation motion and multiplication. The …