Frontiers of silicon-on-insulator

GK Celler, S Cristoloveanu - Journal of Applied Physics, 2003 - pubs.aip.org
Silicon-on-insulator (SOI) wafers are precisely engineered multilayer semiconductor/
dielectric structures that provide new functionality for advanced Si devices. After more than …

[图书][B] Silicon-on-insulator technology: materials to VLSI: materials to Vlsi

JP Colinge - 2004 - books.google.com
Silicon-on-Insulator Technology: Materials to VLSI, Third Edition, retraces the evolution of
SOI materials, devices and circuits over a period of roughly twenty years. Twenty years of …

[图书][B] Ion implantation: basics to device fabrication

E Rimini - 1994 - books.google.com
Ion implantation offers one of the best examples of a topic that starting from the basic
research level has reached the high technology level within the framework of …

Analysis of buried oxide layer formation and mechanism of threading dislocation generation in the substoichiometric oxygen dose region

S Nakashima, K Izumi - Journal of materials research, 1993 - cambridge.org
The structure of SIMOX wafers implanted at 180 keV with doses of 0.1× 1018-2.0×
101816O+ cm− 2 at 550° C, followed by annealing over the temperature range of 1050 …

Optical waveguides in oxygen-implanted buried-oxide silicon-on-insulator structures

BN Kurdi, DG Hall - Optics letters, 1988 - opg.optica.org
We analyze the waveguiding properties of the oxygen-implanted, buried-oxide, silicon-on-
insulator structures currently being developed for use in microelectronics. We find that in …

[图书][B] Ion beam assisted film growth

T Itoh - 2012 - books.google.com
This volume provides up to date information on the experimental, theoretical and
technological aspects of film growth assisted by ion beams. Ion beam assisted film growth is …

Fabrication of buried layers of SiO2 and Si3N4 a using ion beam synthesis

KJ Reeson - Nuclear Instruments and Methods in Physics Research …, 1987 - Elsevier
The properties of buried layers produced by the implantation of high doses of energetic light
ions O+ and N+ are reviewed. Similarities and differences in the as implanted and annealed …

Characterization and depth profiling of E′ defects in buried SiO2

K Vanheusden, A Stesmans - Journal of applied physics, 1993 - pubs.aip.org
Oxygen-vacancy defects (E') generated at the surface of buried SiOz (BOX) layers formed by
O+ implantation during the separation by implantation of oxygen process have been studied …

The reduction of dislocations in oxygen implanted silicon‐on‐insulator layers by sequential implantation and annealing

D Hill, P Fraundorf, G Fraundorf - Journal of applied physics, 1988 - pubs.aip.org
Reduction of the dislocation density in silicon‐on‐insulator layers produced by oxygen
implantation has been achieved by sequentially implanting and annealing the wafers with …

Reduced defect density in silicon‐on‐insulator structures formed by oxygen implantation in two steps

J Margail, J Stoemenos, C Jaussaud, M Bruel - Applied physics letters, 1989 - pubs.aip.org
Up to now, the best quality silicon‐on‐insulator material formed by high‐dose oxygen ion
implantation has been produced by conventional one step implantation and subsequent …