Hafnium oxide (HfO2) is one of the mature high‐k dielectrics that has been standing strong
in the memory arena over the last two decades. Its dielectric properties have been …

Terahertz (THz) light has proven to be a fine tool to probe and control quasi-particles and
collective excitations in solids, to drive phase transitions and associated changes in material …

Nonvolatile memory technologies in Si-based electronics date back to the 1990s.
Ferroelectric field-effect transistor (FeFET) was one of the most promising devices replacing …

Complex oxides, such as ABO 3 perovskites, are an important class of functional materials
that exhibit a wide range of physical, chemical, and electrochemical properties, including …

Over the last 30 years, the study of ferroelectric oxides has been revolutionized by the
implementation of epitaxial‐thin‐film‐based studies, which have driven many advances in …

Semiconductor technology, which is rapidly evolving, is poised to enter a new era for which
revolutionary innovations are needed to address fundamental limitations on material and …

A bit more than a decade after the first report of ferroelectric switching in hafnium dioxide-
based ultrathin layers, this family of materials continues to elicit interest. There is ample …

Ferroelectric materials have remained one of the major focal points of condensed matter
physics and materials science for over 50 years. In the last 20 years, the development of …

Ferroelectric ceramics were born in the early 1940s with the discovery of the phenomenon of
ferroelectricity as the source of the unusually high dielectric constant in ceramic barium …

This important book focuses on the synthesis and fabrication of nanostructures and
nanomaterials, but also includes properties and applications of nanostructures and …