The high crystalline CuO nanofilms have been prepared by spin coating and annealing
combined with a simple chemical method. The obtained films have been characterized by X …

Electrical and interfacial properties of Sn/Methylene Blue (MB)/p-Si Schottky diode have
been determined by using current–voltage (I–V) and capacitance–voltage (C–V) …

The junction characteristics of the organic compound methyl-red film (2-[4-(dimethylamino)
phenylazo] benzoic acid) on a p-type Si substrate have been studied. The current–voltage …

The forward bias current-voltage (IV) characteristics of Au/n-Si Schottky barrier diodes
(SBDs) with Zn doped poly (vinyl alcohol)(PVA: Zn) interfacial layer have been investigated …

We present gas phase ultraviolet photoemission spectra of 3, 4, 9, 10-perylene
tetracarboxylic acid dianhydride (PTCDA) and compare them to condensed phase spectra …

The influence of annealing on structural, electronic features and the current transport
process of the Au/CoPc/undoped-InP (MPS)-type structure is explored. Raman …

Poly (o-anthranilic acid) emeraldine salt (PANA-ES) as a conjugated semiconductor polymer
has been synthesized in an acidic medium based oxidative polymerization route. The …

The nonpolymeric organic compound rhodamine-101 (Rh101) film on a n-type Si or p-type
Si substrate has been formed by means of the evaporation process and the Sn/rhodamine …

The charge conduction properties of the Au/PVA (Bi-doped)/n-Si Schottky barrier diodes
(SBDs) were investigated using current–voltage–temperature (I–V–T) measurements in dark …

In this work, we prepared metal/interlayer/semiconductor (MIS) diodes by coating of an
organic film on p-Si substrate. Metal (Al)/interlayer (Orange GOG)/semiconductor (p-Si) MIS …