[HTML][HTML] Ferromagnetic semiconductor GaMnAs
The newly-developing spintronics technology requires materials that allow control of both
the charge and the spin degrees of freedom of the charge carriers. Ferromagnetic …
the charge and the spin degrees of freedom of the charge carriers. Ferromagnetic …
Giant magnetoresistance and long-range antiferromagnetic interlayer exchange coupling in (Ga, Mn) As/GaAs: Be multilayers
We report the observation of the giant magnetoresistance effect in semiconductor-based
GaMnAs/GaAs: Be multilayers. Clear transitions between low-field-high-resistance and high …
GaMnAs/GaAs: Be multilayers. Clear transitions between low-field-high-resistance and high …
Carrier-Mediated Antiferromagnetic Interlayer Exchange Coupling <?format ?>in Diluted Magnetic Semiconductor Multilayers
We report the antiferromagnetic (AFM) interlayer exchange coupling between Ga 0.97 Mn
0.03 As ferromagnetic semiconductor layers separated by Be-doped GaAs spacers …
0.03 As ferromagnetic semiconductor layers separated by Be-doped GaAs spacers …
Antiferromagnetic interlayer coupling in diluted magnetic thin films with RKKY interaction
K Szałowski, T Balcerzak - Physical Review B—Condensed Matter and …, 2009 - APS
We study a model thin film containing diluted bilayer structure with the Ruderman-Kittel-
Kasuya-Yosida long-range interaction. The magnetic subsystem is composed of two …
Kasuya-Yosida long-range interaction. The magnetic subsystem is composed of two …
Definitive evidence of interlayer coupling between layers separated by a nonmagnetic spacer
We have used polarized neutron reflectometry to study the structural and magnetic
properties of the individual layers in a series of Al Ga As: Be∕ Ga 1− x Mn x As∕ Ga As∕ …
properties of the individual layers in a series of Al Ga As: Be∕ Ga 1− x Mn x As∕ Ga As∕ …
[HTML][HTML] Temperature-induced antiferromagnetic interlayer exchange coupling in (Ga, Mn)(As, P)-based trilayer structure
P Chongthanaphisut, KJ Lee, S Park, J Jang… - Journal of Applied …, 2020 - pubs.aip.org
We present the observation of temperature-induced transition between ferromagnetic (FM)
and antiferromagnetic (AFM) interlayer exchange coupling (IEC) in trilayer structures …
and antiferromagnetic (AFM) interlayer exchange coupling (IEC) in trilayer structures …
Interlayer exchange coupling in ferromagnetic semiconductor trilayers with out-of-plane magnetic anisotropy
We report the observation of ferromagnetic (FM) and antiferromagnetic (AFM) interlayer
exchange coupling (IEC) in GaMnAsP-based trilayer structures with out-of-plane magnetic …
exchange coupling (IEC) in GaMnAsP-based trilayer structures with out-of-plane magnetic …
First-principles studies of interlayer exchange coupling in (Ga, Mn) As-based diluted magnetic semiconductor multilayers
M Luo, Z Tang, J Zheng, ZQ Zhu, JH Chu - Journal of Applied Physics, 2010 - pubs.aip.org
Interlayer exchange coupling (IEC) in a series model diluted magnetic semiconductor
multilayers consisting of two magnetic (Ga, Mn) As layers separated by nondoped or Be …
multilayers consisting of two magnetic (Ga, Mn) As layers separated by nondoped or Be …
Magnetotransport and magnetization dynamics of GaMnAs thin films and magnetic tunnel junctions
AB Hamida, S Sievers, F Bergmann… - … status solidi (b), 2014 - Wiley Online Library
We describe the comprehensive characterization of GaMnAs epitaxial thin films and
magnetic tunnel junctions (MTJ) by complementary techniques ranging from high‐resolution …
magnetic tunnel junctions (MTJ) by complementary techniques ranging from high‐resolution …
Magnetotransport properties of GaMnAs based trilayer structures with different thicknesses of InGaAs spacer layer
Magnetotransport properties of Ga Mn As∕ In Ga As∕ Ga Mn As trilayer structures have
been investigated by Hall measurements. The samples in the series are identical except for …
been investigated by Hall measurements. The samples in the series are identical except for …