This paper presents a design and analysis of a Hetero Dielectric Dual Material Gate
Underlap Spacer Tunnel Field Effect Transistor, aiming to enhance device performance and …

We have designed and simulated a 10-nanometer regime gate High Electron Mobility
Transistor (HEMT) with an undoped region (UR) under the gate with high k dielectric as …

Two-dimensional analytical modelling of Dual Material Gate Tunnel Field Effect Transistor
with change in variation of gate oxide thickness (DMG-UOX-TFET) is proposed in this work …

An underlapped dual-gate (U-DG) quaternary In 0.05 Al 0.75 Ga 0.2 N/GaN metal–oxide–
semiconductor high-electron-mobility transistor (MOS-HEMT) and a conventional ternary Al …

This paper exemplifies an exhaustive, figurative and subjective study on the RF performance
and DC characteristics analysis of an Underlapped Double-Gate (U-DG) AlGaN/GaN …

Current transistor technology has issues with off-state current which reduces power
efficiency. The paper presents a novel Normally-off Underlapped Dual Gate (U-DG) …

This paper presents a comparative and analytical study on the basis of analog performances
of an Underlapped Dual Gate (U-DG) AlGaN/GaN MOS-HEMT with gate oxide and an U-DG …

In this paper, we have investigated the impact of the un-doped and recessed gate structure
on the performance of the 6 H-SiC Metal Semiconductor Field Effect Transistor. The …

The Authors through this paper have investigated and performed an in-depth study of the
Analog performances of an Underlapped Dual Gate (U-DG) Si/SiGe Metal Oxide …

In this work, a Symmetrical Dual Gate Tunnel Field Effect Transistor (SDGTFET) is proposed
with gate dielectric materials in 10nm technology. The electrical performance parameters of …