GaAsBi: from molecular beam epitaxy growth to devices
RD Richards, NJ Bailey, Y Liu… - … status solidi (b), 2022 - Wiley Online Library
GaAsBi has been researched as a candidate material for optoelectronic devices for around
two decades. Bi‐induced localized states induce a rapid rising of the valence band edge …
two decades. Bi‐induced localized states induce a rapid rising of the valence band edge …
Photoinduced tunability of the reststrahlen band in
BT Spann, R Compton, D Ratchford, JP Long… - Physical Review B, 2016 - APS
Materials with a negative dielectric permittivity (eg, metals) display high reflectance and can
be shaped into nanoscale optical resonators exhibiting extreme mode confinement, a …
be shaped into nanoscale optical resonators exhibiting extreme mode confinement, a …
Surface effects of vapour-liquid-solid driven Bi surface droplets formed during molecular-beam-epitaxy of GaAsBi
Abstract Herein we investigate a (001)-oriented GaAs1− x Bi x/GaAs structure possessing Bi
surface droplets capable of catalysing the formation of nanostructures during Bi-rich growth …
surface droplets capable of catalysing the formation of nanostructures during Bi-rich growth …
Dilute GaAs1− xBix epilayers with different bismuth concentrations grown by Molecular Beam Epitaxy: A promising candidate for gamma radiation sensor applications
Radiation interaction studies are very important for exploring the technological applications
of new materials in radiation environments. This work reports the effect of gamma radiation …
of new materials in radiation environments. This work reports the effect of gamma radiation …
Role of defects in tailoring the structural, electrical and optical properties of Schottky diodes based on GaAsBi alloy through gamma radiation
This work provides an extensive study of the influence of γ-rays on structural, electrical, and
optical characteristics of GaAsBi Schottky diodes fabricated through Molecular Beam Epitaxy …
optical characteristics of GaAsBi Schottky diodes fabricated through Molecular Beam Epitaxy …
Increasing Optical Efficiency in the Telecommunication Bands of Strain-Engineered Alloys
The search for semiconducting materials with improved optical properties relies on the
possibility to manipulate the semiconductors band structure by using quantum confinement …
possibility to manipulate the semiconductors band structure by using quantum confinement …
Raman and AFM studies on nominally undoped, p-and n-type GaAsBi alloys
We study structural properties and surface formation of undoped, n-and p-type doped
GaAsBi alloys with various bismuth compositions using Micro-Raman, Fourier Transform …
GaAsBi alloys with various bismuth compositions using Micro-Raman, Fourier Transform …
[HTML][HTML] GaAs1− yBiy Raman signatures: illuminating relationships between the electrical and optical properties of GaAs1− yBiy and Bi incorporation
We report the use of two Raman signatures, the Bi-induced longitudinal-optical-plasmon-
coupled (LOPC) mode and the GaAs Fröhlich scattering intensity, present in nominally …
coupled (LOPC) mode and the GaAs Fröhlich scattering intensity, present in nominally …
Raman spectroscopic determination of hole concentration in undoped GaAsBi
S Zhu, W Qiu, H Wang, T Lin, P Chen… - Semiconductor Science …, 2018 - iopscience.iop.org
Raman spectra of undoped GaAs 1− x Bi x (0< x< 0.037) grown on GaAs by molecular beam
epitaxy were investigated. With an increase of Bi component, we find that the longitudinal …
epitaxy were investigated. With an increase of Bi component, we find that the longitudinal …
Increased dephasing length in heavily doped GaAs
Ion implantation of S and Te followed by sub-second flash lamp annealing with peak
temperature about 1100 C is employed to obtain metallic n++-GaAs layers. The electron …
temperature about 1100 C is employed to obtain metallic n++-GaAs layers. The electron …