Reconfigurable Physical Reservoir in GaN/α-In2Se3 HEMTs Enabled by Out-of-Plane Local Polarization of Ferroelectric 2D Layer
Significant effort for demonstrating a gallium nitride (GaN)-based ferroelectric metal–oxide–
semiconductor (MOS)-high-electron-mobility transistor (HEMT) for reconfigurable operation …
semiconductor (MOS)-high-electron-mobility transistor (HEMT) for reconfigurable operation …
AlN/GaN/InGaN Coupling-Channel HEMTs for Improved gm and Gain Linearity
In this article, we report on the effective transconductance (gm) and gain linearity
improvement of submicrometer gate AlN-barrier-based transistors using GaN/InGaN …
improvement of submicrometer gate AlN-barrier-based transistors using GaN/InGaN …
Electrical properties of 90-nm InAlN/GaN HEMT on silicon substrate
P Cui, Y Zeng - Physica E: Low-dimensional Systems and …, 2021 - Elsevier
GaN high-electron-mobility transistors (HEMTs) on silicon substrate have attracted much
attention owing to the low-cost and the large area availability of the Si substrate. In this …
attention owing to the low-cost and the large area availability of the Si substrate. In this …
Near-ideal subthreshold swing in InAlN/GaN Schottky gate high electron mobility transistor using carbon-doped GaN buffer
This work presents a comparative study of the subthreshold swing (SS) in InAlN/GaN-based
high electron mobility transistor (HEMT), with and without carbon doping in the buffer layer. It …
high electron mobility transistor (HEMT), with and without carbon doping in the buffer layer. It …
A novel method to determine bias-dependent source and drain parasitic series resistances in AlGaN/GaN high electron mobility transistors
G Jiang, C Fu, Y Liu, G Yang, P Cui, G Zhang, Y Lv… - Solid-State …, 2024 - Elsevier
Abstract The AlGaN/GaN high electron mobility transistors (HEMTs) with T-gate that suitable
for high frequency applications were fabricated. A novel method to extract the bias …
for high frequency applications were fabricated. A novel method to extract the bias …
AlN/GaN/InGaN coupling-channel HEMTs with steep subthreshold swing of sub-60 mV/decade
This work reports an AlN/GaN/InGaN high electron mobility transistor (HEMT) with a steep
subthreshold swing (SS) of sub-60 mV/dec utilizing a coupling-channel architecture. The …
subthreshold swing (SS) of sub-60 mV/dec utilizing a coupling-channel architecture. The …
High Performance CMOS-Compatible RF GaN-on-Silicon HEMTs With Low-Resistive and Highly-Conformal Ohmic Contacts
This article presents Au-free ohmic contacts with low contact resistance for AlGaN/GaN high
electron mobility transistors (HEMTs) on silicon substrates, featuring a hybrid-deposited …
electron mobility transistors (HEMTs) on silicon substrates, featuring a hybrid-deposited …
Investigation of contact mechanism and gate electrostatic control in multi-channel AlGaN/GaN high electron mobility transistors with deep recessed ohmic contact
In this paper, the ohmic contact mechanism and gate electrostatic control of a deep-
recessed ohmic contact structure for multi-channel Al0. 3Ga0. 7N/GaN high electron mobility …
recessed ohmic contact structure for multi-channel Al0. 3Ga0. 7N/GaN high electron mobility …
Novel enhancement-mode p-channel GaN MOSFETs with an AlN insert layer
H Huang, M Pan, Q Wang, X Xie, Y Yang… - IEEE Electron …, 2024 - ieeexplore.ieee.org
In this work, an enhancement-mode (E-mode) p-channel GaN metal‒oxide‒semiconductor
field-effect transistor (p-MOSFET) with a maximum ON-state current (I ON) density of 10.5 …
field-effect transistor (p-MOSFET) with a maximum ON-state current (I ON) density of 10.5 …
Deep sub-60 mV/dec subthreshold swing independent of gate bias sweep direction in an in situ SiN/Al0. 6Ga0. 4N/GaN-on-Si metal-insulator high electron mobility …
H Du, Z Liu, L Hao, G Gao, W Xing, W Zhang… - Applied Physics …, 2023 - pubs.aip.org
In this Letter, we demonstrated deep sub-60 mV/dec subthreshold swings (SS) independent
of gate bias sweep direction in GaN-based metal–insulator–semiconductor high electron …
of gate bias sweep direction in GaN-based metal–insulator–semiconductor high electron …