Recent progress in solar‐blind deep‐ultraviolet photodetectors based on inorganic ultrawide bandgap semiconductors

C Xie, XT Lu, XW Tong, ZX Zhang… - Advanced Functional …, 2019 - Wiley Online Library
Due to its significant applications in many relevant fields, light detection in the solar‐blind
deep‐ultraviolet (DUV) wavelength region is a subject of great interest for both scientific and …

Progress in focal plane array technologies

A Rogalski - Progress in Quantum Electronics, 2012 - Elsevier
Development of focal plane arrays started in seventies last century and has revolutionized
imaging systems in the next decades. This paper presents progress in optical detector …

The road ahead for ultrawide bandgap solar-blind UV photodetectors

A Kalra, UU Muazzam, R Muralidharan… - Journal of Applied …, 2022 - pubs.aip.org
This Perspective seeks to understand and assess why ultrawide bandgap (UWBG)
semiconductor-based deep-UV photodetectors have not yet found any noticeable presence …

AlxGa1-xN-based back-illuminated solar-blind photodetectors with external quantum efficiency of 89%

E Cicek, R McClintock, CY Cho, B Rahnema… - Applied Physics …, 2013 - pubs.aip.org
We report on high performance Al x Ga 1− x N-based solar-blind ultraviolet photodetector
(PD) array grown on sapphire substrate. First, high quality, crack-free AlN template layer is …

Ultraviolet photodetectors: From photocathodes to low-dimensional solids

A Rogalski, Z Bielecki, J Mikołajczyk, J Wojtas - Sensors, 2023 - mdpi.com
The paper presents the long-term evolution and recent development of ultraviolet
photodetectors. First, the general theory of ultraviolet (UV) photodetectors is briefly …

[图书][B] Handbook of nitride semiconductors and devices, GaN-based optical and electronic devices

H Morkoç - 2009 - books.google.com
The three volumes of this handbook treat the fundamentals, technology and nanotechnology
of nitride semiconductors with an extraordinary clarity and depth. They present all the …

16 × 4 Linear Solar-Blind UV Photoconductive Detector Array Based on β-Ga2O3 Film

YS Zhi, Z Liu, SH Zhang, S Li, ZY Yan… - … on electron devices, 2021 - ieeexplore.ieee.org
In this article, a 16× 4 linear array of β-Ga 2 O 3-based metal-semiconductor-metal
structured photodetector is described for solar-blind sensing operation at a wavelength of …

Parasitic reaction and its effect on the growth rate of AlN by metalorganic chemical vapor deposition

DG Zhao, JJ Zhu, DS Jiang, H Yang, JW Liang… - Journal of Crystal …, 2006 - Elsevier
The Al composition of metalorganic chemical vapor deposition (MOCVD)-grown AlGaN alloy
layers is found to be greatly influenced by the parasitic reaction between ammonia (NH3) …

Solar-blind AlGaN-based pin photodetectors with high breakdown voltage and detectivity

T Tut, T Yelboga, E Ulker, E Ozbay - Applied Physics Letters, 2008 - pubs.aip.org
We report on the high performance solar-blind AlGaN-based pin photodetectors that are
grown by metal-organic chemical vapor deposition on c-plane sapphire substrates. The dark …

Multi-pixels gallium oxide UV detector array and optoelectronic applications

L Shu, S Yao, Z Xi, Z Liu, Y Guo, W Tang - Nanotechnology, 2023 - iopscience.iop.org
With the continuous advancement of deep-ultraviolet (DUV) communication and
optoelectronic detection, research in this field has become a significant focal point in the …