Luminescence database I—minerals and materials

CM MacRae, NC Wilson - Microscopy and Microanalysis, 2008 - academic.oup.com
A luminescence database for minerals and materials has been complied from the literature,
the aim being to create a resource that will aid in the analysis of luminescence spectral of …

Structural, optical, and electrical properties of Yb-doped ZnO thin films prepared by spray pyrolysis method

I Soumahoro, G Schmerber, A Douayar… - Journal of Applied …, 2011 - pubs.aip.org
Yb-doped ZnO thin films were prepared on glass substrates by spray pyrolysis technique in
order to investigate the insertion of Yb ions in the ZnO matrix and the related optical …

Location of lanthanide impurity levels in the III-V semiconductor GaN

P Dorenbos, E Van der Kolk - Applied Physics Letters, 2006 - pubs.aip.org
Knowledge from lanthanide spectroscopy on wide band gap (6–10 eV) inorganic
compounds is used to understand and predict optical and electronic properties of the …

All‐Inorganic Micrometric CsPbBr3:Yb3+ Powder as a Multifunctional Material for Photovoltaics and Optical Thermometry: Structural and Optical Characterization

M Stefanski, B Bondzior, T Gzyl… - Advanced Optical …, 2023 - Wiley Online Library
Halide perovskites have been studied very intensively by researchers during the last
decade. Development of these materials has improved their unique optoelectrical properties …

Laser induced emission spectra of gallium nitride nanoceramics

M Stefanski, P Głuchowski, W Strek - Ceramics International, 2020 - Elsevier
The paper presents the studies of the intense broadband laser induced emission (LIE) of
GaN (gallium nitride) nanoceramics in both the visible and near infrared regions. The GaN …

Spectra and energy levels of Yb3+ in AlN

T Koubaa, M Dammak, M Kammoun… - Journal of Applied …, 2009 - pubs.aip.org
We report on the crystal-field energy levels calculation of Yb 3+ ions in an AlN host using
crystal-field theory. Cathodoluminescence spectra of AlN grown by molecular beam epitaxy …

Rare earth 4f hybridization with the GaN valence band

L Wang, WN Mei, SR McHale… - Semiconductor …, 2012 - iopscience.iop.org
The placement of the Gd, Er and Yb 4f states within the GaN valence band has been
explored by both experiment and theory. The 4d–4f photoemission resonances for various …

Crystal field and Zeeman parameters of substitutional Yb3+ ion in GaN

T Koubaa, M Dammak, M Kammoun… - Journal of alloys and …, 2010 - Elsevier
Cathodoluminescence (CL) and photoluminescence (PL) spectra of GaN grown by
metalorganic chemical vapor deposition on (0001) sapphire substrate and doped by …

Schottky barrier formation at the Au to rare earth doped GaN thin film interface

SR McHale, JW McClory, JC Petrosky, J Wu… - The European …, 2011 - cambridge.org
The Schottky barriers formed at the interface between gold and various rare earth doped
GaN thin films (RE= Yb, Er, Gd) were investigated in situ using synchrotron photoemission …

Effect of Erbium doping on GaN electronic and optical properties: First-principles study

M Lantri, A Boukortt, S Meskine, H Abbassa… - … physics letters B, 2019 - World Scientific
In this work, we studied the electronic and optical properties of Er x Ga 1− x N with a
concentration x= 0. 0 6 2 5. Based on a first-principle calculation and using the FP-LAPW full …