Semiconductors are key to our modern society, enabling a myriad of fields, including
electronics, photovoltaics, and photonics. The performance of semiconductor devices can be …

GeSn has emerged as a promising semiconductor with optoelectronic functionality in the
mid-infrared, with the potential of replacing expensive III–V technology for monolithic on-chip …

The synthesis of germanium nanocrystals (GeNCs) with well-defined surface chemistry is of
considerable interest because of their potential applications in the optoelectronic, battery …

First principle calculations on pure and germanium (Ge) incorporated tin (IV) oxide (SnO 2)
are performed to understand their structural, electronic, and optical properties at the …

In this work, ion irradiations in-situ of a transmission electron microscope are performed on
single-crystal germanium specimens with either xenon, krypton, argon, neon or helium …

During ion irradiation which is often used for the purposes of bandgap engineering,
nanostructures can experience a phenomenon known as ion‐induced bending (IIB). The …

This study involves the design and modelling of a triple junction lattice-matched photovoltaic
cell using AlGaAs, GaAs and Germanium. Its performance is modelled using MATLAB under …

Ge-based p-channel Field-Effect Transistors (FETs) are regarded as the most promising
devices to replace Si-based p-channel FETs with emphasis on reducing device power …

Germanium exhibits electron and hole mobilities that are higher than silicon. These unique
properties make Ge a promising material for the development of metal-oxide semiconductor …

In this work, germanium nanowires rendered fully amorphous via xenon ion irradiation have
been annealed within a transmission electron microscope to induce crystallization. During …