For a long time now, 3C-SiC has attracted attention of the semiconductor community due to
its very interesting properties. The lack of commercial 3C-SiC seeds for epitaxy has forced …

Gallium nitride (GaN)-based light-emitting diodes (LEDs) are highly energy efficient and
their widespread usage in lighting can induce significant worldwide electricity savings. To …

We have studied the Mg doping of cubic GaN grown by plasma-assisted Molecular Beam
Epitaxy (PA-MBE) over GaAs (001) substrates. In particular, we concentrated on conditions …

The thermodynamics properties of the wurtzite and zinc-blende In x Ga 1− x N alloys are
calculated using first-principles density-functional calculations. Special quasirandom …

LEDs based on hexagonal InGaN/GaN quantum wells are dominant technology for many
lighting applications. However, their luminous efficacy for green and amber emission and at …

Transmission electron microscopy and x-ray diffraction measurements reveal the presence
of stacking faults SFs in undoped cubic GaN thin layers. We demonstrate the importance of …

The suitability of Al x Ga 1− x N nucleation layers (NLs) with varying Al fraction x for the
metal organic vapour phase epitaxy of zincblende GaN on (001) 3C-SiC was investigated …

Cubic zincblende GaN films were grown by metalorganic vapour-phase epitaxy on 3C-
SiC/Si (0 0 1) templates and characterized using Nomarski optical microscopy, atomic force …

Abstract Cubic (zinc‐blende) InGaN/GaN double‐heterostructure LEDs were fabricated on
GaAs (001) substrates. The device performance and crystal quality were investigated. The …

The cubic phase of III‐nitrides has received much less attention than the hexagonal
structure, because of difficulties inherent to the growth of this meta‐stable phase. However …