Materials and processes for Schottky contacts on silicon carbide
Silicon carbide (4H-SiC) Schottky diodes have reached a mature level of technology and are
today essential elements in many applications of power electronics. In this context, the study …
today essential elements in many applications of power electronics. In this context, the study …
Electrical properties of inhomogeneous tungsten carbide Schottky barrier on 4H-SiC
In this paper, the electrical behavior of tungsten carbide (WC) Schottky barrier on 4H-SiC
was investigated. First, a statistical current-voltage (I–V) analysis in forward bias, performed …
was investigated. First, a statistical current-voltage (I–V) analysis in forward bias, performed …
Comparison of nickel, cobalt, palladium, and tungsten Schottky contacts on n-4H-silicon carbide
VE Gora, A Chawanda, C Nyamhere, FD Auret… - Physica B: Condensed …, 2018 - Elsevier
We have investigated the current-voltage (IV) characteristics of nickel (Ni), cobalt (Co),
tungsten (W) and palladium (Pd) Schottky contacts on n-type 4 H-SiC in the 300–800 K …
tungsten (W) and palladium (Pd) Schottky contacts on n-type 4 H-SiC in the 300–800 K …
Ni Schottky barrier on heavily doped phosphorous implanted 4H-SiC
The electrical behavior of Ni Schottky barrier formed onto heavily doped (ND> 10 19 cm− 3)
n-type phosphorous implanted silicon carbide (4H-SiC) was investigated, with a focus on the …
n-type phosphorous implanted silicon carbide (4H-SiC) was investigated, with a focus on the …
Electrical evolution of W and WC Schottky contacts on 4H-SiC at different annealing temperatures
In this paper, we investigate the electrical evolution of tungsten (W) and tungsten carbide
(WC) Schottky contacts on 4H-SiC subjected to thermal treatments at different annealing …
(WC) Schottky contacts on 4H-SiC subjected to thermal treatments at different annealing …
Defects induced by solid state reactions at the tungsten-silicon carbide interface
Defects introduced by the solid state reactions between tungsten and silicon carbide have
been studied using deep level transient spectroscopy (DLTS) and Laplace DLTS. W/4H-SiC …
been studied using deep level transient spectroscopy (DLTS) and Laplace DLTS. W/4H-SiC …
Reverse-bias stress-induced electrical parameters instability in 4H-SiC JBS diodes terminated nonequidistance FLRs
Q Song, H Yuan, Q Sun, C Han, X Tang… - … on Electron Devices, 2019 - ieeexplore.ieee.org
In this article, the breakdown voltage (V BR) shift of 4H-SiC Junction Barrier Schottky (JBS)
diodes terminated by optimum nonequidistant field limiting rings (FLRs) subject to reverse …
diodes terminated by optimum nonequidistant field limiting rings (FLRs) subject to reverse …
Analysis of the inhomogeneous barrier and phase composition of W/4H-SiC Schottky contacts formed at different annealing temperatures
SX Dong, Y Bai, YD Tang, H Chen, XL Tian… - Chinese …, 2018 - iopscience.iop.org
The electrical characteristics of W/4H-SiC Schottky contacts formed at different annealing
temperatures have been measured by using current–voltage–temperatures (I–V–T) and …
temperatures have been measured by using current–voltage–temperatures (I–V–T) and …
Temperature effects on the ruggedness of SiC Schottky diodes under surge current
J León, X Perpiñà, V Banu, J Montserrat… - Microelectronics …, 2014 - Elsevier
This work analyzes the effects of temperature on the destruction of 1.2 kV–10 A silicon
carbide (SiC) tungsten-based Schottky barrier diodes (W-SBD's) under surge current tests …
carbide (SiC) tungsten-based Schottky barrier diodes (W-SBD's) under surge current tests …
Structural analysis of SiC Schottky diodes failure mechanism under current overload
2 kV–10 A tungsten Schottky diodes (W-SBD) have been aged and tested at limit under
current overload (surge current pulses) to determine their structural weakest spots. All …
current overload (surge current pulses) to determine their structural weakest spots. All …