A high-throughput thermodynamic analysis based on the CALPHAD approach is employed
in this study to gain insights into the chemical vapor deposition (CVD) of SiC from the SiCl 4 …

High-throughput thermodynamic analysis of chemical vapor deposition of silicon oxynitride
films from the Si–O–N–H and Si–O–N–H–Cl systems are performed based on the …

Silicon carbide is a wide bandgap semiconductor ideally suitable for high temperature and
high power applications. An active SiC layer is usually fabricated using halide-assisted …

The use of chlorinated chemical vapor deposition (CVD) chemistry for growth of
homoepitaxial layers of silicon carbide (SiC) has diminished the problem of homogeneous …

In this study, we systematically explore the impact of C/Si ratio, pre-carbonization time, H2
etching time, and growth pressure on the buffer layer and subsequent epitaxial layer of 6 …

Chemical vapor deposition (CVD) is one of the technology platforms forming the backbone
of the semiconductor industry and is vital in the production of electronic devices. To upscale …

The deposition rate of silicon carbide (SiC) in chemical vapor deposition (CVD) can be
boosted by addition of chlorine. This has been explored and applied for hard coatings and …

Atomization energies, enthalpies of formation, entropies as well as heat capacities of the SiH
n X m and CH n X m systems, with X being F, Cl and Br, have been studied using quantum …

Point defects in n-and p-type 4H-SiC grown by fluorinated chemical vapor deposition (CVD)
have been characterized optically by photoluminescence (PL) and electrically by deep-level …

Fluorinated chemistry in chemical vapor deposition (CVD) of silicon carbide (SiC) with SiF 4
as Si precursor has been shown to fully eliminate the formation of silicon clusters in the gas …