Junctionless transistors: State-of-the-art
A Nowbahari, A Roy, L Marchetti - Electronics, 2020 - mdpi.com
Recent advances in semiconductor technology provide us with the resources to explore
alternative methods for fabricating transistors with the goal of further reducing their sizes to …
alternative methods for fabricating transistors with the goal of further reducing their sizes to …
Drain-engineered TFET with fully suppressed ambipolarity for high-frequency application
MRU Shaikh, SA Loan - IEEE Transactions on Electron …, 2019 - ieeexplore.ieee.org
In this paper, we propose and simulate a novel drain-engineered structure of a quadruple-
gate tunnel fieldeffect transistor (TFET). The proposed device employs a lateral dual source …
gate tunnel fieldeffect transistor (TFET). The proposed device employs a lateral dual source …
Charge-plasma-based inverted T-shaped source-metal dual-line tunneling FET with improved performance at 0.5 V operation
In this paper, a charge plasma-based inverted T-shaped source-metal dual line-tunneling
field-effect transistor (CP-ITSM-DLTFET) has been proposed to improve the ON current (I …
field-effect transistor (CP-ITSM-DLTFET) has been proposed to improve the ON current (I …
Impact of channel thickness on the performance of GaAs and GaSb DG-JLMOSFETs: an atomistic tight binding based evaluation
In this paper, the performance of GaAs and GaSb based sub-10 nm double-gate
junctionless metal-oxide-semiconductor field-effect transistors (DG-JLMOSFETs) have been …
junctionless metal-oxide-semiconductor field-effect transistors (DG-JLMOSFETs) have been …
Investigating a dual MOSCAP variant of line-TFET with improved vertical tunneling incorporating FIQC effect
In this article, we investigate a variant of the line-tunnel FET employing dual MOS-capacitor
(MOSCAP) extensions incorporating field-induced quantum confinement (FIQC). Unlike …
(MOSCAP) extensions incorporating field-induced quantum confinement (FIQC). Unlike …
Implementation of charge plasma based dopingless multi bridge channel MOSFET for enhanced performances
In this article, a distinctive approach for implementing a Multi Bridge Channel (MBC) without
doping (dopingless) in a silicon channel has been proposed. The P-type semiconductor is …
doping (dopingless) in a silicon channel has been proposed. The P-type semiconductor is …
Structural optimization of a junctionless VSTB FET to improve its electrical and thermal performance
This article provides an insight into the electrical and thermal performance improvement of a
junctionless vertical super-thin body (JL VSTB) FET based on dimensional and material …
junctionless vertical super-thin body (JL VSTB) FET based on dimensional and material …
Impact of back gate bias on analog performance of dopingless transistor
R Kumar, M Panchore - Transactions on Electrical and Electronic Materials, 2023 - Springer
In this brief, the impact of back gate bias (V gb), on analog performance of silicon on
insulator dopingless transistor (SOI-DLT) is investigated. It is observed that SOI-DLTs are …
insulator dopingless transistor (SOI-DLT) is investigated. It is observed that SOI-DLTs are …
Investigation of a dual MOSCAP TFET with improved vertical tunneling and its near-infrared sensing application
VD Wangkheirakpam, B Bhowmick… - Semiconductor …, 2020 - iopscience.iop.org
In this work, a δ-doped dual MOS-capacitor (MOSCAP)(D-MOS) tunnel field effect transistor
is proposed and investigated. The investigation has been carried out by varying the mole …
is proposed and investigated. The investigation has been carried out by varying the mole …
Linearity performance and intermodulation distortion analysis of D-MOS vertical TFET
Recent trend researches provide potential results of tunnel field effect transistors (TFETs) for
being used in many electronic circuit applications. This work studies the comparative …
being used in many electronic circuit applications. This work studies the comparative …