Compositionally graded III-nitride alloys: Building blocks for efficient ultraviolet optoelectronics and power electronics
Wide bandgap aluminum gallium nitride (AlGaN) semiconductor alloys have established
themselves as the key materials for building ultraviolet (UV) optoelectronic and power …
themselves as the key materials for building ultraviolet (UV) optoelectronic and power …
Applications and impacts of nanoscale thermal transport in electronics packaging
RJ Warzoha, AA Wilson… - Journal of …, 2021 - asmedigitalcollection.asme.org
This review introduces relevant nanoscale thermal transport processes that impact thermal
abatement in power electronics applications. Specifically, we highlight the importance of …
abatement in power electronics applications. Specifically, we highlight the importance of …
[HTML][HTML] Toward AlGaN channel HEMTs on AlN: Polarization-induced 2DEGs in AlN/AlGaN/AlN heterostructures
Due to its high breakdown electric field, the ultra-wide bandgap semiconductor AlGaN has
garnered much attention recently as a promising channel material for next-generation high …
garnered much attention recently as a promising channel material for next-generation high …
[HTML][HTML] Al-rich AlGaN based transistors
AG Baca, AM Armstrong, BA Klein… - Journal of Vacuum …, 2020 - pubs.aip.org
Research results for AlGaN-channel transistors are reviewed as they have progressed from
low Al-content and long-channel devices to Al-rich and short-channel RF devices. Figure of …
low Al-content and long-channel devices to Al-rich and short-channel RF devices. Figure of …
High-performance AlGaN double channel HEMTs with improved drain current density and high breakdown voltage
Y Zhang, Y Li, J Wang, Y Shen, L Du, Y Li… - Nanoscale Research …, 2020 - Springer
In this work, AlGaN double channel heterostructure is proposed and grown by metal organic
chemical vapor deposition (MOCVD), and high-performance AlGaN double channel high …
chemical vapor deposition (MOCVD), and high-performance AlGaN double channel high …
AlN/Al0. 5Ga0. 5N HEMTs with heavily Si-doped degenerate GaN contacts prepared via pulsed sputtering
R Maeda, K Ueno, A Kobayashi… - Applied Physics …, 2022 - iopscience.iop.org
This paper reports AlN barrier Al 0.5 Ga 0.5 N high electron mobility transistors (HEMTs) with
heavily Si-doped degenerate GaN contacts prepared by pulsed sputtering deposition …
heavily Si-doped degenerate GaN contacts prepared by pulsed sputtering deposition …
Investigation of AlGaN Channel HEMTs on β-Ga2O3 Substrate for High-Power Electronics
The wider bandgap AlGaN (Eg> 3.4 eV) channel-based high electron mobility transistors
(HEMTs) are more effective for high voltage operation. High critical electric field and high …
(HEMTs) are more effective for high voltage operation. High critical electric field and high …
Nitrogen-Polar Polarization-Doped Field-Effect Transistor Based on Al0.8Ga0.2N/AlN on SiC With Drain Current Over 100 mA/mm
This letter reports the demonstration of N-polar Al 0.8 Ga 0.2 N/AlN continuously-graded-
channel polarization-doped field-effect transistors (PolFETs) on SiC. A PolFET with a source …
channel polarization-doped field-effect transistors (PolFETs) on SiC. A PolFET with a source …
[HTML][HTML] Plasma etching of wide bandgap and ultrawide bandgap semiconductors
The precise patterning of front-side mesas, backside vias, and selective removal of ternary
alloys are all needed for power device fabrication in the various wide bandgap (AlGaN/GaN …
alloys are all needed for power device fabrication in the various wide bandgap (AlGaN/GaN …
Al0. 75Ga0. 25N/Al0. 6Ga0. 4N heterojunction field effect transistor with fT of 40 GHz
Abstract An Al 0.75 Ga 0.25 N/Al 0.6 Ga 0.4 N heterostructure field effect transistor with
graded MBE-regrown contacts is designed, grown, and fabricated on AlN/sapphire …
graded MBE-regrown contacts is designed, grown, and fabricated on AlN/sapphire …