HfO 2-based ferroelectric thin films have attracted significant interest for semiconductor
device applications due to their compatibility with complementary metal oxide …

Hafnium oxide (HfO2)-based ferroelectric tunnel junctions (FTJs) have been extensively
evaluated for high-speed and low-power memory applications. Herein, we investigated the …

The discovery of unconventional scale-free ferroelectricity in HfO2-based fluorite thin films
has attracted great attention in recent years for their promising applications in low-power …

Ferroelectric fluorite-structured oxide thin films have attracted increased interest from both
academia and industry because of their superior scalability─ in which their ferroelectric …

Ferroelectrics and ionic conductors are important functional materials, each supporting a
plethora of applications in information and energy technology. The underlying physics …

Abstract (Al–Hf) mixed oxide thin films (HfAlO) are attracted by many researchers because of
their outstanding optical and electrical properties compared to hafnium oxide (HfO 2). This …

HfO 2-based dielectrics are promising for nanoscale ferroelectric applications, and the most
favorable material within the family is Zr-substituted hafnia, ie, Hf 1− x Zr x O 2 (HZO). The …

Aluminum incorporated hafnium oxide (HfAlO) has garnered significant attention due to its
high dielectric constant. The present study employs supercycle plasma-enhanced atomic …

Abstract The use of Hf0. 5Zr0. 5O2 (HZO) films within hafnia‐based ferroelectric tunnel
junctions (FTJ) presents a promising avenue for next‐generation non‐volatile memory …

The increasing demand of information and communication technology has pushed
conventional computing paradigm to its limit. In addition, physical and technological factors …