Z Li, J Wei, J Meng, Y Liu, J Yu, T Wang, K Xu, P Liu… - Nano Letters, 2023 - ACS Publications
Hafnium oxide (HfO2)-based ferroelectric tunnel junctions (FTJs) have been extensively evaluated for high-speed and low-power memory applications. Herein, we investigated the …
F Yan, Y Wu, Y Liu, P Ai, S Liu, S Deng, KH Xue… - Materials …, 2024 - pubs.rsc.org
The discovery of unconventional scale-free ferroelectricity in HfO2-based fluorite thin films has attracted great attention in recent years for their promising applications in low-power …
Ferroelectric fluorite-structured oxide thin films have attracted increased interest from both academia and industry because of their superior scalability─ in which their ferroelectric …
L Ma, J Wu, T Zhu, Y Huang, Q Lu, S Liu - Physical Review Letters, 2023 - APS
Ferroelectrics and ionic conductors are important functional materials, each supporting a plethora of applications in information and energy technology. The underlying physics …
Abstract (Al–Hf) mixed oxide thin films (HfAlO) are attracted by many researchers because of their outstanding optical and electrical properties compared to hafnium oxide (HfO 2). This …
J Huang, GQ Mao, KH Xue, S Yang, F Ye… - Journal of Applied …, 2023 - pubs.aip.org
HfO 2-based dielectrics are promising for nanoscale ferroelectric applications, and the most favorable material within the family is Zr-substituted hafnia, ie, Hf 1− x Zr x O 2 (HZO). The …
Aluminum incorporated hafnium oxide (HfAlO) has garnered significant attention due to its high dielectric constant. The present study employs supercycle plasma-enhanced atomic …
J Kim, Y Park, J Lee, E Lim, JK Lee… - Advanced Materials …, 2024 - Wiley Online Library
Abstract The use of Hf0. 5Zr0. 5O2 (HZO) films within hafnia‐based ferroelectric tunnel junctions (FTJ) presents a promising avenue for next‐generation non‐volatile memory …
E Lim, D Kim, J Park, M Koo, S Kim - Journal of Physics D …, 2024 - iopscience.iop.org
The increasing demand of information and communication technology has pushed conventional computing paradigm to its limit. In addition, physical and technological factors …