The Al x Ga 1− x As/GaAs heterostructure system is potentially of great importance for many
high-speed electronics and optoelectronic devices, because the lattice parameter difference …

Control of band discontinuities in semiconductor heterostructures may introduce a new
important degree of freedom in the design of heterojunction devices and allow independent …

Thermal stress in GaN epitaxial layers with different thicknesses grown on sapphire
substrates by metalorganic vapor phase epitaxy using an AlN buffer layer was investigated …

Stresses and strains in heterostructures have dominated semiconductor research during the
last ten years. We review the theory and experimental work on stresses in III-V …

The fast increase in complexity of electronic and optoelectronic systems has created a need
for high performance and multifunctional integrated circuits. One of the major restrictions is …

A characterization technique was developed for measuring the complete tensor nature of
stress fields in semiconductors. By combining incident light tilted away from the normal axis …

Strain characterization of materials through Raman spectroscopy often requires the optical
phonon wave vector to be in directions other than those of the strain-modified phonon …

A Raman spectroscopy study on highly mismatched GaAs layers with thickness ranging from
15 nm to 6.6 μm and grown by metal‐organic vapor‐phase epitaxy on InP (001) substrates …

Nanoscale spatial phase modulation of GaN grown on a 355-nm period array of V-grooves
fabricated in a Si (001) substrate is reported. Orientation-dependent selective nucleation of …

GaAs is grown by metal-organic vapor-phase epitaxy on a 55 nm round-hole patterned Si
substrate with SiO 2 as a mask. The threading dislocations, which are stacked on the lowest …