Hexagonal Si1–x Ge x with suitable alloy composition promises to become a new silicon
compatible direct bandgap family of semiconductors. Theoretical calculations, however …

With their unique structural, optical and electrical properties, III–V nanowires (NWs) are an
extremely attractive option for the direct growth of III–Vs on Si for tandem solar cell …

Doping is a fundamental property of semiconductors and constitutes the basis of modern
microelectronic and optoelectronic devices. Their miniaturization requires contactless …

Cathodoluminescence mapping is used as a contactless method to probe the electron
concentration gradient of Te-doped GaAs nanowires. The room temperature and low …

Nanowires (NW) epitaxially grown on Si substrate are efficient light absorbers and allow to
integrate high-quality III-V materials on Si by preventing defects induced by the lattice …

We grow and characterize solar cells based on Ga-catalyzed GaAs NWs radial pin
homojunctions grown by Molecular Beam Epitaxy onto inactive p-type Si (111) substrates …