III–V nanowires and nanowire optoelectronic devices
III–V nanowires (NWs) have been envisioned as nanoscale materials for next-generation
technology with good functionality, superior performance, high integration ability and low …
technology with good functionality, superior performance, high integration ability and low …
Fundamentals of the nanowire solar cell: Optimization of the open circuit voltage
Present day nanowire solar cells have reached an efficiency of 17.8%. Nanophotonic
engineering by nanowire tapering allows for high solar light absorption. In combination with …
engineering by nanowire tapering allows for high solar light absorption. In combination with …
Wetting of Ga on SiOx and Its Impact on GaAs Nanowire Growth
F Matteini, G Tütüncüoglu, H Potts… - Crystal Growth & …, 2015 - ACS Publications
Ga-assisted growth of GaAs nanowires on silicon provides a path for integrating high-purity
III–Vs on silicon. The nature of the oxide on the silicon surface has been shown to impact the …
III–Vs on silicon. The nature of the oxide on the silicon surface has been shown to impact the …
From twinning to pure zincblende catalyst-free InAs (Sb) nanowires
III–V nanowires are candidate building blocks for next generation electronic and
optoelectronic platforms. Low bandgap semiconductors such as InAs and InSb are …
optoelectronic platforms. Low bandgap semiconductors such as InAs and InSb are …
Tailoring the diameter and density of self-catalyzed GaAs nanowires on silicon
F Matteini, VG Dubrovskii, D Rüffer… - …, 2015 - iopscience.iop.org
Nanowire diameter has a dramatic effect on the absorption cross-section in the optical
domain. The maximum absorption is reached for ideal nanowire morphology within a solar …
domain. The maximum absorption is reached for ideal nanowire morphology within a solar …
Designing Semiconductor Nanowires for Efficient Photon Upconversion via Heterostructure Engineering
Energy upconversion via optical processes in semiconductor nanowires (NWs) is attractive
for a variety of applications in nano-optoelectronics and nanophotonics. One of the main …
for a variety of applications in nano-optoelectronics and nanophotonics. One of the main …
Growth map for Ga-assisted growth of GaAs nanowires on Si (111) substrates by molecular beam epitaxy
F Bastiman, H Küpers, C Somaschini… - Nanotechnology, 2016 - iopscience.iop.org
For the Ga-assisted growth of GaAs nanowires on Si (111) substrates by molecular beam
epitaxy, growth temperature, As flux, and Ga flux have been systematically varied across the …
epitaxy, growth temperature, As flux, and Ga flux have been systematically varied across the …
Optimizing the yield of A-polar GaAs nanowires to achieve defect-free zinc blende structure and enhanced optical functionality
Compound semiconductors exhibit an intrinsic polarity, as a consequence of the ionicity of
their bonds. Nanowires grow mostly along the (111) direction for energetic reasons …
their bonds. Nanowires grow mostly along the (111) direction for energetic reasons …
Impact of the Ga droplet wetting, morphology, and pinholes on the orientation of GaAs nanowires
F Matteini, G Tütüncüoglu, D Mikulik… - Crystal Growth & …, 2016 - ACS Publications
Ga-catalyzed growth of GaAs nanowires on Si is a candidate process for achieving
seamless III/V integration on IV. In this framework, the nature of silicon's surface oxide is …
seamless III/V integration on IV. In this framework, the nature of silicon's surface oxide is …
Tailoring morphology and vertical yield of self-catalyzed GaP nanowires on template-free Si substrates
Tailorable synthesis of III-V semiconductor heterostructures in nanowires (NWs) enables
new approaches with respect to designing photonic and electronic devices at the nanoscale …
new approaches with respect to designing photonic and electronic devices at the nanoscale …