Probing nonperturbative third and fifth harmonic generation on silicon without and with thermal oxide layer

J Seres, E Seres, E Céspedes… - Journal of …, 2023 - iopscience.iop.org
We examine Si with and without additional SiO 2 thin film coating as a candidate for
producing powerful 3rd and 5th harmonics of Ti: sapphire laser pulses for future …

Electronic structure of Si(110)-() studied by scanning tunneling spectroscopy and density functional theory

M Setvin, V Brázdová, DR Bowler, K Tomatsu… - Physical Review B …, 2011 - APS
The electronic structure of the Si (110)-(16× 2) surface was studied by scanning tunneling
microscopy at room temperature (RT) and at 78 K. A combination of point tunneling …

Structure and growth of quasi-one-dimensional YSi2 nanophases on Si (100)

V Iancu, PRC Kent, S Hus, H Hu… - Journal of Physics …, 2012 - iopscience.iop.org
Quasi-one-dimensional YSi 2 nanostructures are formed via self-assembly on the Si (100)
surface. These epitaxial nanowires are metastable and their formation strongly depends on …

Low-energy electron potentiometry: contactless imaging of charge transport on the nanoscale

J Kautz, J Jobst, C Sorger, RM Tromp, HB Weber… - Scientific Reports, 2015 - nature.com
Charge transport measurements form an essential tool in condensed matter physics. The
usual approach is to contact a sample by two or four probes, measure the resistance and …

Atomic scale study of corrugating and anticorrugating states on the bare Si (1 0 0) surface

M Yengui, HP Pinto, J Leszczynski… - Journal of Physics …, 2014 - iopscience.iop.org
In this article, we study the origin of the corrugating and anticorrugating states through the
electronic properties of the Si (1 0 0) surface via a low-temperature (9 K) scanning tunneling …

Observation of lateral band-bending in the edge vicinity of atomically-thin Bi insulating film formed on Si (111) surface

K Nagaoka, T Uchihashi, T Nakayama - Surface Science, 2016 - Elsevier
We investigated the local electronic structure in the vicinity of the domain edge of the
atomically-thin Bi insulating film formed on a Si (111) surface using a scanning tunneling …

[图书][B] Atomic structure and electronic properties of Tb silicide nanowires

S Appelfeller - 2018 - search.proquest.com
Metallic nanowires grown by self-organisation on Si surfaces may be interesting for future
applications in Si based nanotechnology, but they will also show unique physical …

[PDF][PDF] Aluminum nanostructures on Si (100)-2× 1: STM/STS study

M Setvín, I Ošťádal, J Pudl, P Sobotík - … III: Physics WDS'08 Proceedings of …, 2009 - Citeseer
Aluminum forms various structures on Si (100)-2× 1. The most important of these are one-
dimensional chains which are formed at room temperature and Si-Al clusters which can form …

Studium vlastností bimetalických nanostruktur na površích křemíku metodami STM a STS

P Zimmermann - 2010 - dspace.cuni.cz
Práce se zabývá studiem lineárních nanostruktur tvořených kovy III.(Al, In) a IV.(Sn) skupiny
na povrchu Si (001) 2× 1 metodami řádkovací tunelové mikroskopie a spektroskopie. Atomy …

[PDF][PDF] Scanning-tunneling-microscope investigations on Rb exposed TaS2 and light emission from silicon

P Schmidt - 2008 - macau.uni-kiel.de
Two different aspects of surface science were analyzed in this thesis. First, the light emission
properties of single crystal silicon with different orientations and doping were studied using …