Ultra-low-threshold continuous-wave and pulsed lasing in tensile-strained GeSn alloys
Strained GeSn alloys are promising for realizing light emitters based entirely on group IV
elements. Here, we report GeSn microdisk lasers encapsulated with a SiN x stressor layer to …
elements. Here, we report GeSn microdisk lasers encapsulated with a SiN x stressor layer to …
Low-threshold optically pumped lasing in highly strained germanium nanowires
The integration of efficient, miniaturized group IV lasers into CMOS architecture holds the
key to the realization of fully functional photonic-integrated circuits. Despite several years of …
key to the realization of fully functional photonic-integrated circuits. Despite several years of …
Probes for ultrasensitive THz nanoscopy
Scattering-type scanning near-field microscopy (s-SNOM) at terahertz (THz) frequencies
could become a highly valuable tool for studying a variety of phenomena of both …
could become a highly valuable tool for studying a variety of phenomena of both …
Germanium based photonic components toward a full silicon/germanium photonic platform
V Reboud, A Gassenq, JM Hartmann, J Widiez… - Progress in Crystal …, 2017 - Elsevier
Lately, germanium based materials attract a lot of interest as they can overcome some limits
inherent to standard Silicon Photonics devices and can be used notably in Mid-Infra-Red …
inherent to standard Silicon Photonics devices and can be used notably in Mid-Infra-Red …
Impact of tensile strain on low Sn content GeSn lasing
D Rainko, Z Ikonic, A Elbaz, N von den Driesch… - Scientific reports, 2019 - nature.com
In recent years much effort has been made to increase the Sn content in GeSn alloys in
order to increase direct bandgap charge carrier recombination and, therefore, to reach room …
order to increase direct bandgap charge carrier recombination and, therefore, to reach room …
Temperature-dependent photoluminescence in Ge: Experiment and theory
J Menéndez, CD Poweleit, SE Tilton - Physical Review B, 2020 - APS
We report a photoluminescence study of high-quality Ge samples at temperatures 12 K≤
T≤ 295 K, over a spectral range that covers phonon-assisted emission from the indirect gap …
T≤ 295 K, over a spectral range that covers phonon-assisted emission from the indirect gap …
Mapping the Interfacial Electronic Structure of Strain-Engineered Epitaxial Germanium Grown on InxAl1–xAs Stressors
The indirect nature of silicon (Si) emission currently limits the monolithic integration of
photonic circuitry with Si electronics. Approaches to circumvent the optical shortcomings of …
photonic circuitry with Si electronics. Approaches to circumvent the optical shortcomings of …
PIC-integrable, uniformly tensile-strained Ge-on-insulator photodiodes enabled by a recessed SiN x stressor
Mechanical strain engineering has been promising for many integrated photonic
applications. However, for the engineering of a material electronic bandgap, a trade-off …
applications. However, for the engineering of a material electronic bandgap, a trade-off …
Enhanced room-temperature electroluminescence from a germanium waveguide on a silicon-on-insulator diode with a silicon nitride stressor
K Tani, K Oda, M Deura, T Ido - Optics Express, 2021 - opg.optica.org
Germanium (Ge) is an attractive material for monolithic light sources on a silicon chip.
Introduction of tensile strain using a silicon nitride (SiN_x) stressor is a promising means for …
Introduction of tensile strain using a silicon nitride (SiN_x) stressor is a promising means for …
[HTML][HTML] Ge1-xSnx/Si1-ySny SLs lattice-matched to Ge for 1.55 μm lasers
L Zhang, J Dai - Physics Letters A, 2023 - Elsevier
GeSn is a promising material for fabricating light sources on Si integrated circuits. Because
the lattice constant of GeSn is larger than that of Ge, GeSn lasers are grown on relaxed …
the lattice constant of GeSn is larger than that of Ge, GeSn lasers are grown on relaxed …