Probing the efficacy of large-scale nonporous IGZO for visible-to-NIR detection capability: an approach toward high-performance image sensor circuitry

A Sen, H Park, P Pujar, A Bala, H Cho, N Liu… - ACS …, 2022 - ACS Publications
The technological ability to detect a wide spectrum range of illuminated visible-to-NIR is
substantially improved for an amorphous metal oxide semiconductor, indium gallium zinc …

Large area, ultrathin, and transparent InGaZnO films from printing of liquid Ga–In–Zn alloys for thin film transistors

B Du, Q Li, J Wei, J Liu - ACS Applied Nano Materials, 2023 - ACS Publications
Amorphous InGaZnO (IGZO) films with high visible transmittance and wide bandgaps are
good candidates to fabricate thin film transistors'(TFTs) switching for flat-panel displays. The …

Photo-response modulation of organic transistors for multi-level light sensing using active layer microstructure control

D Park, G Tarsoly, D Kwon, TJ Shin… - Journal of Materials …, 2023 - pubs.rsc.org
Annealing processes are widely used to alter the morphology of organic films and optimize
the electrical properties of organic field-effect transistors (OFETs). However, the impact of …

Solution processable visible-light and color-selective image sensor with a ZnO/QDs/ZrO2 sandwich structure

JH Jeong, SJ Kang, SJ Kang - Current Applied Physics, 2023 - Elsevier
Quantum dots (QDs) are emerging materials for optoelectronic devices because of their
facile tunable bandgap and solution processability. However, overcoming inherent …

Recent Applications and Future Perspectives of Heterojunction Phototransistors Based on Amorphous Oxide Semiconductors

T Chen, R Hu, T Sun, Z Li, B Li, X Lv, B Lin… - ACS Applied …, 2024 - ACS Publications
Thin-film transistors (TFTs) based on amorphous oxide semiconductors (AOSs) have
attracted significant attention in the field of flat-panel displays due to their excellent electrical …

Optimizing the photoresponse enhancement in a hybrid inorganic–organic phototransistor with an amorphous indium gallium zinc oxide channel layer and PTCDI-C …

G Tarsoly, JY Lee, YJ Jeong, S Pyo… - Journal of Materials …, 2022 - pubs.rsc.org
Amorphous metal oxide semiconductors offer high performance and versatility for new
generation electronic devices. On the other hand, their applicability to optoelectronics is …

Enhancement of visible light detection for indium–gallium–zinc oxide-based transparent phototransistor via application of porous-structured polytetrafluoroethylene

H Yoo, K Kwak, IS Lee, D Kim, K Park, MS Kim… - Applied Physics …, 2022 - pubs.aip.org
In this paper, a transparent phototransistor with improved visible light detection by applying
sub gap states engineering and a porous polytetrafluoroethylene (PTFE) layer on the indium …

Realization of Visible‐Light Detection in InGaZnO Thin‐Film Transistor via Oxygen Vacancy Modulation through N2 Treatments

X Xu, M Zhang, Y Yang, L Lu, F Lin… - Advanced Electronic …, 2023 - Wiley Online Library
InGaZnO (IGZO) thin‐film transistors (TFTs) have gained widespread use in active matrix
(AM) displays due to their decent field‐effect mobility and low off current. However, the wide …

Improving the photoswitching performance of a transistor with amorphous metal oxide semiconductor thin film by a gradient annealing approach

G Tarsoly, JY Lee, SJ Kim - Optical Materials, 2024 - Elsevier
Metal oxides are attracting attention as electronic mate rials in research and industry. Thin
films of amorphous indium gallium zinc oxide (a-IGZO) exhibit low absorbance in the visible …

Low-Power Phototransistor with Enhanced Visible-Light Photoresponse and Electrical Performances Using an IGZO/IZO Heterostructure

YB Kim, JH Jeong, MH Park, JM Yun, JH Ma, HJ Ha… - Materials, 2024 - mdpi.com
In this study, we demonstrated the effective separation of charge carriers within the IGZO/IZO
heterostructure by incorporating IZO. We have chosen IGZO for its high mobility and …