This paper review the research works made so far in associating Ge isoelectronic element to
SiC crystals, either by incorporating it inside SiC matrix or for assisting SiC epitaxial growth …

High temperature annealing of 4 H-or 6 H-Si C (0001) crystals is well known to desorb Si
from the surface and to generate a C-rich (6√ 3× 6√ 3) R 30°(6√ 3) reconstruction …

In this work, we report on the addition of GeH 4 gas during homoepitaxial growth of 4H-SiC
by chemical vapor deposition. Ge introduction does not affect dramatically the surface …

Calculations are performed on the stability and electronic structure of an ordered Si 0.75 Ge
0.25 C alloy within the generalized gradient approximation using the first-principles method …

Si1− xGexnanowires (NWs) were prepared by a Vapor–Liquid–Solid (VLS) procedure using
Au as the catalyst at a fixed growth temperature of 400° C. The alloy composition was …

Pseudomorphic-strained layers containing from 0.07–1.25 atomic% Ge were formed by ion
implantation at 1000 C into 4H-SiC substrates. X-ray diffraction revealed high crystalline …

The effect of germanium content on the structural, electronic, and optical properties of
ordered Si 1− x Ge x C alloys (x= 0, 0.25, 0.5, 0.75, 1) has been systemically investigated in …

With the aim of comparing initial Ge adsorption and desorption modes on different surface
terminations of 4H–SiC (0001) faces, 3× 3,√ 3×√ 3R30°(R3) and 6√ 3× 6√ 3R30°(6R3) …

Using complementary surface analysis techniques, we study the Ge growth on distinct SiC
(0 0 0 1) reconstructions and elucidate complex mechanisms occurring by thermal …

In this work we have performed an ab initio total energy investigation of the Ge adsorption
process on the Si-terminated SiC (0001)-(3× 3) R30° and (3× 3) surfaces. We find that Ge …