The present invention provides a rotating semi-batch ALD device and process which ensure
high productivity, minimal particle formation, low gas consumption and high coverage during …

Structures and methods for Flash memory with low tunnel barrier intergate insulators are
provided. The non-volatile memory includes a first source/drain region and a second …

Structures and methods for programmable array type logic and/or memory devices with
asymmetrical low tunnel barrier intergate insulators are provided. The programmable array …

Structures and methods for programmable array type logic and/or memory devices with
graded composition metal oxide tunnel barrier intergate insulators are provided. The …

The architecture, materials choice and process technology for stacked-capacitors in
embedded-DRAM applications are a crucial concern for each new technology node. An …

The interest in depositing dense HfO2 films has increased due to their possible applications
as a highpermittivity material that can replace SiO2 in metal–oxide–semiconductor (MOS) …

Structures, systems and methods for transistors utilizing oxide nanolaminates are provided.
One transistor embodiment includes a first source/drain region, a second source/drain …

Structures and methods for memory cells having a volatile and a non-volatile component in
a single memory cell are provided. The memory cell includes a first source/drain region and …

6,534,420 B2 3/2003 Ahn et al. 2001/0041250 A1 11/2001 Werkhoven et al. 6,538,330 B1
3/2003 Forbes 2001/0055838 A1 12/2001 Walker et al................ 438,129 6,541,280 B2 …

Structures and methods for programmable array type logic and/or memory devices with
asymmetrical low tunnel bar rier intergate insulators are provided. The programmable array …