[图书][B] Computational Electronics: semiclassical and quantum device modeling and simulation

D Vasileska, SM Goodnick, G Klimeck - 2017 - books.google.com
Starting with the simplest semiclassical approaches and ending with the description of
complex fully quantum-mechanical methods for quantum transport analysis of state-of-the …

[HTML][HTML] Atomic fluctuations lifting the energy degeneracy in Si/SiGe quantum dots

B Paquelet Wuetz, MP Losert, S Koelling… - Nature …, 2022 - nature.com
Abstract Electron spins in Si/SiGe quantum wells suffer from nearly degenerate conduction
band valleys, which compete with the spin degree of freedom in the formation of qubits …

[PDF][PDF] Provably trainable rotationally equivariant quantum machine learning

MT West, J Heredge, M Sevior, M Usman - PRX Quantum, 2024 - APS
Exploiting the power of quantum computation to realize superior machine learning
algorithms has been a major research focus of recent years, but the prospects of quantum …

[HTML][HTML] Silicon quantum processor with robust long-distance qubit couplings

G Tosi, FA Mohiyaddin, V Schmitt, S Tenberg… - Nature …, 2017 - nature.com
Practical quantum computers require a large network of highly coherent qubits,
interconnected in a design robust against errors. Donor spins in silicon provide state-of-the …

[HTML][HTML] SiGe quantum wells with oscillating Ge concentrations for quantum dot qubits

T McJunkin, B Harpt, Y Feng, MP Losert… - Nature …, 2022 - nature.com
Large-scale arrays of quantum-dot spin qubits in Si/SiGe quantum wells require large or
tunable energy splittings of the valley states associated with degenerate conduction band …

Tight-binding analysis of the electronic structure of dilute bismide alloys of GaP and GaAs

M Usman, CA Broderick, A Lindsay, EP O'Reilly - Physical Review B …, 2011 - APS
We develop an atomistic, nearest-neighbor sp 3 s* tight-binding Hamiltonian to investigate
the electronic structure of dilute bismide alloys of GaP and GaAs. Using this model, we …

Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET

GP Lansbergen, R Rahman, CJ Wellard, I Woo, J Caro… - Nature Physics, 2008 - nature.com
The ability to build structures with atomic precision is one of the defining features of
nanotechnology. Achieving true atomic-level functionality, however, requires the ability to …

Practical strategies for enhancing the valley splitting in Si/SiGe quantum wells

MP Losert, MA Eriksson, R Joynt, R Rahman… - Physical Review B, 2023 - APS
Silicon/silicon-germanium heterostructures have many important advantages for hosting
spin qubits. However, controlling the valley splitting (the energy splitting between the two …

Electrically controlling single-spin qubits in a continuous microwave field

A Laucht, JT Muhonen, FA Mohiyaddin, R Kalra… - Science …, 2015 - science.org
Large-scale quantum computers must be built upon quantum bits that are both highly
coherent and locally controllable. We demonstrate the quantum control of the electron and …

NEMO5: A parallel multiscale nanoelectronics modeling tool

S Steiger, M Povolotskyi, HH Park… - IEEE Transactions …, 2011 - ieeexplore.ieee.org
The development of a new nanoelectronics modeling tool, NEMO5, is reported. The tool
computes strain, phonon spectra, electronic band structure, charge density, charge current …