The stress dependencies of the phonon modes in a 4H silicon carbide (SiC) crystal were
investigated. The deformation potentials of the A 1 (TO), E 2, and E 1 (TO) modes were …

A superjunction (SJ) structure in power devices is compatible with low specific on-resistance
and high breakdown voltage. To fabricate the SJ structure in SiC power devices, the …

In this study ion‐implanted lateral 4H‐SiC pin diodes are reported, which show an
unexpectedly high room temperature in‐plane magnetic field sensitivity approaching 100 …

Abstract Silicon Carbide (SiC), also known as carborundum, has been found to be widely
useful as a substrate and wide band gap semiconductor in radiation resistant optoelectronic …

Lateral spreads of Al and P atoms implanted (10∼ 700 keV) into a high-purity semi-
insulating 4H silicon carbide (SiC) substrate have been experimentally investigated …

We have reported that hydrogen or helium ion implantation can suppress the expansion of
stacking faults in SiC devices. These results suggest that point defects caused by ion …

Low-energy cross-sectional cathodoluminescence (CL) with a beam energy of 1 keV was
applied to Si-ion-implanted β-Ga 2 O 3 (− 201) wafers to investigate implantation damage …

We used 3D micro-X-ray topography (3D μ-XRT) to construct a 3D structure of the threading
screw dislocations (TSDs) in 4H-SiC. The 00012 diffraction condition, which can observe the …

We conducted Raman spectroscopy measurements of 4H-SiC and 6H-SiC up to 69 GPa
and 1023 K to assess the stability and bonding of SiC at high pressure and temperature …

In the development of 4H‐SiC bipolar devices, defect generation during the fabrication
process is an important issue for maintaining a long carrier lifetime in the drift layers. Herein …