Wide‐bandgap perovskite/gallium arsenide tandem solar cells

Z Li, TH Kim, SY Han, YJ Yun, S Jeong… - Advanced Energy …, 2020 - Wiley Online Library
Gallium arsenide (GaAs) photovoltaic (PV) cells have been widely investigated due to their
merits such as thin‐film feasibility, flexibility, and high efficiency. To further increase their …

AlInAsSb avalanche photodiodes on InP substrates

SH Kodati, S Lee, B Guo, AH Jones, M Schwartz… - Applied Physics …, 2021 - pubs.aip.org
We report the gain, noise, and dark current characteristics of random alloy Al 0.79 In 0.21 As
0.74 Sb 0.26 (hereafter AlInAsSb)-based avalanche photodiodes (APDs) on InP substrates …

Effect and optimization of ZnO layer on the performance of GaInP/GaAs tandem solar cell

A Bakour, A Saadoune, I Bouchama, F Dhiabi… - Micro and …, 2022 - Elsevier
Abstract Two-dimentionnal Atlas SILVACO-TCAD® device simulator is used to simulate the
performances of dual-junction (2J) GaInP/GaAs tandem solar cell under AM1. 5G …

Advances in the Use of Atomic Force Microscopy as a Diagnostic Tool for Solar Cells Characterization: From Material Design to Device Applications

CC Ahia, EL Meyer - physica status solidi (a), 2024 - Wiley Online Library
Considerable efforts in search for an effective characterization technique for photovoltaic
devices with utmost precision is on the increase. For precise analysis and tailoring of device …

Effect of single-layer Ta2O5 and double-layer SiO2/Ta2O5 anti-reflective coatings on GaInP/GaAs/Ge triple-junction solar cell performance

T Sertel, Y Ozen, V Baran, S Ozcelik - Journal of Alloys and Compounds, 2019 - Elsevier
The structural, optical and morphological properties of the tantalum pentoxide (Ta 2 O 5) and
SiO 2/Ta 2 O 5 films to be used as an anti-reflective coating (ARC) were investigated …

High Electric Field Sensing in Ultrathin SiO₂ and Tunnel Region to Enhance GaInP/Si Dual Junction Solar Cell Performance

M Verma, GP Mishra - IEEE Sensors Journal, 2021 - ieeexplore.ieee.org
The Si material is widely used by the manufacturers for sensing applications, because of its
abundance. Better carrier sensing capability provide high performance. Solar cell is a …

Performance optimization of the InGaP/GaAs dual‐junction solar cell using SILVACO TCAD

MS Salem, OM Saif, A Shaker… - International Journal …, 2021 - Wiley Online Library
In this work, an optimization of the InGaP/GaAs dual‐junction (DJ) solar cell performance is
presented. Firstly, a design for the DJ solar cell based on the GaAs tunnel diode is provided …

[PDF][PDF] Modelling and simulation of AlGaAs/GaAs solar cell

KC Devendra, R Wagle, R Gaib, A Shrivastava… - Am. J. Eng …, 2020 - researchgate.net
Enhancing the efficiency and finding optimal combination of thickness and concentration of
multi-junction solar cell is most prominent problem in photovoltaic. In this paper …

An ARC less InGaP/GaAs DJ solar cell with hetero tunnel junction

GS Sahoo, PP Nayak, GP Mishra - Superlattices and Microstructures, 2016 - Elsevier
Multi junction solar cell has not achieved an optimum performance yet. To acquire more
conversion efficiency research on multi junction solar cell are in progress. In this work we …

Dopant-Induced Modifications of GaxIn(1–x)P Nanowire-Based p–n Junctions Monolithically Integrated on Si(111)

N Bologna, S Wirths, L Francaviglia… - … applied materials & …, 2018 - ACS Publications
Today, silicon is the most used material in photovoltaics, with the maximum conversion
efficiency getting very close to the Shockley–Queisser limit for single-junction devices …