This paper used molecular dynamics simulation to reveal the origins of the ductile plasticity
in polycrystalline gallium arsenide (GaAs) during its nanoscratching. Velocity-controlled …

Numerous papers have already reported various results on electrical and optical
performances of GaAs‐based materials for optoelectronic applications. Other papers have …

The preparation of high-quality GaAs crystals is the basis for the development of high-
frequency microwave electronic devices and light-emitting devices. A molecular dynamics …

To clarify the proton energy dependence of proton irradiation damage in GaAs materials,
intrinsic and Si-doped GaAs were irradiated with 100 keV and 2 MeV protons at different …

Purpose: In this paper, p-GaN samples have been grown on silicon substrates under various
processing conditions. The effects of growth tenperature and thermal annealing on the …

The first two decades of the 21st Century have seen a wide exploitation of Gallium Arsenide
(GaAs) in photoemitter device, microwave devices, hall element, solar cell, wireless …

Purpose: Nitrides are compound semiconductor nanomaterials that are suitable for use in
light-emitting diodes. It has been desired to grow high quality gallium nitride crystal thin film …

Catalytic transformations are of utmost importance for the synthesis of goods and materials.
Transition metal systems have traditionally been employed for catalytic processes, however …

The generation and multiplication of dislocations in Gallium Arsenide (GaAs) and Indium
Phosphide (InP) single crystals grown by the Vertical Gradient Freeze (VGF) process is …

Si-doped GaAs single crystals were grown by vertical gradient freeze using PBN crucibles.
The amount of oxide layer $ B_ {2} O_ {3} $ in PBN crucible was changed ($0 {\sim} 0.2 wt …