摘要随着芯片特征尺寸的不断减小, 借助193 nm 准分子光源的浸没式深紫外光刻技术已进入
瓶颈, 使用多次曝光技术的工艺路线也已到达目前的商用极限. 极紫外光刻(EUVL) 采用13. 5 nm …

The primary requirement for the development of tools for extreme ultraviolet lithography
(EUVL) has been the identification and optimization of suitable sources. These sources must …

半导体产业是高科技, 信息化时代的支柱. 光刻技术, 作为半导体产业的核心技术之一,
已成为世界各国科研人员的重点研究对象. 本文综述了激光等离子体13.5 nm …

We introduce a spectroscopic absorption imaging method in the UV regime (225–400 nm) to
study tin vapor created by irradiating a thin film with a low intensity 10 8 W cm− 2 …

Lithography tools are being built and shipped to semiconductor manufacturers for high
volume manufacturing using extreme ultraviolet lithography (EUVL) at a wavelength of 13.5 …

We experimentally study the vaporization of free-flying liquid tin sheets when exposed to a
100-ns laser pulse with an intensity between 0.2× 10 7 and 4× 10 7 W/cm 2, a case inspired …

The collision of two laser-produced plasmas (LPP), individually generated from the
opposing faces of a tin wedge, was studied experimentally and through the HEIGHTS …

We present the results of a time and space resolved optical-spectroscopic study of colliding
plasmas formed at the front surfaces of flat and inclined Cu slab targets as a function of both …

Experiments and simulations have been carried out to study the colliding process by two
lasers irradiating a gold half-hohlraum. Via analyzing the evolutionary x-ray images …

The advanced research on bright 13.5 nm extreme ultraviolet (EUV) light sources with low
debris is of crucial importance for the semiconductor industry. The scheme of laser produced …