Gallium nitride (GaN) devices are revolutionarily advancing the efficiency, frequency, and
form factor of power electronics. However, the material composition, architecture, and …

GaN-based transistors with p-GaN gate are commonly accepted as promising devices for
application in power converters, thanks to the positive and stable threshold voltage, the low …

Despite the potential of GaN-based power transistors, these devices still suffer from certain
parasitic and reliability issues that limit their static and dynamic performance and the …

This paper reports an experimental demonstration of the time-dependent failure of GaN-on-
Si power high-electron-mobility transistors with p-GaN gate, submitted to a forward gate …

This paper reports on the impact of soft-and hard-switching conditions on the dynamic ON-
resistance of AlGaN/GaN high-electron mobility transistors. For this study, we used a special …

With the continued miniaturization of devices in the semiconductor industry, atomic layer
deposition (ALD) of silicon nitride thin films (SiNx) has attracted great interest due to the …

In this letter, we studied the forward bias gate breakdown mechanism on enhancement-
mode p-GaN gate AlGaN/GaN high-electron mobility transistors. To the best of our …

Power GaN transistors have recently demonstrated to be excellent devices for application in
power electronics. The high breakdown field and the superior mobility of the 2-dimensional …

In this paper, we present a systematic investigation of metal–organic chemical vapor
deposition-grown in situ SiN as the gate dielectric and surface passivation for AlGaN/GaN …

This paper investigates the performance of AlGaN/gallium nitride (GaN) MIS high electron
mobility transistors (MIS-HEMTs). The gate dielectric layer and the surface passivation layer …