We report the design and fabrication of high performance high power lasers with emission
wavelength from 800 to 1000 nm using a novel wafer structure, in which a graded V-shape …

Extremely large epitaxial waveguides with thickness t WG= 8.6 μm enable diode lasers with
very narrow vertical divergence angle. We demonstrate that when such designs are …

We report a novel approach for increasing the output power in passively mode locked
semiconductor lasers. Our approach uses epitaxial structures with an optical trap in the …

The 980 nm pump module market has been marked by a continuing demand for higher
output power per module. Single mode laser diodes capable of delivering ever-increasing …

We review the development of wavelength stabilized 980nm pump laser modules without
active temperature stabilization for applications in erbium-doped fiber amplifiers. Operation …

To suppress lasing in higher order transverse modes and improve kink levels in ridge-type
980-nm fiber pump semiconductor lasers, a novel ridge structure with optical antiguiding …

In this communication we report on the performance characteristics of Bookham's latest
generation of 915-990 nm broad area single emitter (BASE) laser diodes with around 90 μm …

In this communication we present the characteristics of Bookham's MU7-9xx-01 laser
module with multimode fiber output. This latest generation of our multimode modules is …

To suppress lasing in higher order transverse modes and improve kink levels in ridge-type
980-nm fiber pump semiconductor lasers, a novel ridge structure with antiguiding cladding …

This paper reports on improvement of stability of the fundamental horizontal transverse
mode in a ridge-type semiconductor laser by incorporating transversal diffraction gratings …