Metal-catalyzed semiconductor nanowires: a review on the control of growth directions
SA Fortuna, X Li - Semiconductor Science and Technology, 2010 - iopscience.iop.org
Semiconductor nanowires have become an important building block for nanotechnology.
The growth of semiconductor nanowires using a metal catalyst via the vapor–liquid–solid …
The growth of semiconductor nanowires using a metal catalyst via the vapor–liquid–solid …
GaAs core− shell nanowires for photovoltaic applications
JA Czaban, DA Thompson, RR LaPierre - Nano letters, 2009 - ACS Publications
We report the use of Te as an n-type dopant in GaAs core− shell pn junction nanowires for
use in photovoltaic devices. Te produced significant change in the morphology of GaAs …
use in photovoltaic devices. Te produced significant change in the morphology of GaAs …
Advances in the synthesis of InAs and GaAs nanowires for electronic applications
New materials and device concepts are in great demand for continual (opto) electronic
device scaling and performance enhancement. Arsenide III-V semiconductor nanowires …
device scaling and performance enhancement. Arsenide III-V semiconductor nanowires …
Self-catalyzed growth of GaAs nanowires on cleaved Si by molecular beam epitaxy
Self-assembled GaAs nanowires have been grown on Si by molecular beam epitaxy without
the use of any outside metal catalyst. The growth occurs on Si facets obtained by the …
the use of any outside metal catalyst. The growth occurs on Si facets obtained by the …
Twinning superlattice formation in GaAs nanowires
Semiconductor nanowires have proven a versatile platform for the realization of novel
structures unachievable by traditional planar epitaxy techniques. Among these, the periodic …
structures unachievable by traditional planar epitaxy techniques. Among these, the periodic …
Incorporation of the dopants Si and Be into GaAs nanowires
We studied the doping with Si and Be of GaAs nanowires (NWRs) grown by molecular beam
epitaxy. Regarding the NW morphology, no influence was observed for Si doping but high …
epitaxy. Regarding the NW morphology, no influence was observed for Si doping but high …
A systematic study on the growth of GaAs nanowires by metal− organic chemical vapor deposition
The epitaxial growth of GaAs nanowires (NWs) on GaAs (111) B substrates by metal−
organic chemical vapor deposition has been systematically investigated as a function of …
organic chemical vapor deposition has been systematically investigated as a function of …
Synthesis and characterizations of ternary InGaAs nanowires by a two-step growth method for high-performance electronic devices
InAs nanowires have been extensively studied for high-speed and high-frequency
electronics due to the low effective electron mass and corresponding high carrier mobility …
electronics due to the low effective electron mass and corresponding high carrier mobility …
Au-assisted growth of GaAs nanowires by gas source molecular beam epitaxy: Tapering, sidewall faceting and crystal structure
MC Plante, RR LaPierre - Journal of Crystal Growth, 2008 - Elsevier
GaAs nanowires grown by gas source molecular beam epitaxy for 3, 10, 30, and 40min
durations were studied by both scanning and transmission electron microscopy, providing a …
durations were studied by both scanning and transmission electron microscopy, providing a …
Controllable p–n Switching Behaviors of GaAs Nanowires via an Interface Effect
Due to the extraordinary large surface-to-volume ratio, surface effects on semiconductor
nanowires have been extensively investigated in recent years for various technological …
nanowires have been extensively investigated in recent years for various technological …