Remote epitaxy

H Kim, CS Chang, S Lee, J Jiang, J Jeong… - Nature Reviews …, 2022 - nature.com
Remote epitaxy is an emerging technology for producing single-crystalline, free-standing
thin films and structures. The method uses 2D van der Waals materials as semi-transparent …

Applications of remote epitaxy and van der Waals epitaxy

I Roh, SH Goh, Y Meng, JS Kim, S Han, Z Xu, HE Lee… - Nano …, 2023 - Springer
Epitaxy technology produces high-quality material building blocks that underpin various
fields of applications. However, fundamental limitations exist for conventional epitaxy, such …

Carrier lifetime enhancement in halide perovskite via remote epitaxy

J Jiang, X Sun, X Chen, B Wang, Z Chen, Y Hu… - Nature …, 2019 - nature.com
Crystallographic dislocation has been well-known to be one of the major causes responsible
for the unfavorable carrier dynamics in conventional semiconductor devices. Halide …

Impact of 2D–3D heterointerface on remote epitaxial interaction through graphene

H Kim, K Lu, Y Liu, HS Kum, KS Kim, K Qiao, SH Bae… - ACS …, 2021 - ACS Publications
Remote epitaxy has drawn attention as it offers epitaxy of functional materials that can be
released from the substrates with atomic precision, thus enabling production and …

Remote epitaxial interaction through graphene

CS Chang, KS Kim, BI Park, J Choi, H Kim, J Jeong… - Science …, 2023 - science.org
The concept of remote epitaxy involves a two-dimensional van der Waals layer covering the
substrate surface, which still enable adatoms to follow the atomic motif of the underlying …

Remote heteroepitaxy of GaN microrod heterostructures for deformable light-emitting diodes and wafer recycle

J Jeong, Q Wang, J Cha, DK Jin, DH Shin, S Kwon… - Science …, 2020 - science.org
There have been rapidly increasing demands for flexible lighting apparatus, and micrometer-
scale light-emitting diodes (LEDs) are regarded as one of the promising lighting sources for …

Long-Range Orbital Hybridization in Remote Epitaxy: The Nucleation Mechanism of GaN on Different Substrates via Single-Layer Graphene

Y Qu, Y Xu, B Cao, Y Wang, J Wang… - ACS Applied Materials …, 2022 - ACS Publications
Remote epitaxy is a very promising technique for the preparation of single-crystal thin films
of flexibly transferred III–V group semiconductors. However, the epilayer nucleation …

Modulation of remote epitaxial heterointerface by graphene-assisted attenuative charge transfer

Y Wang, Y Qu, Y Xu, D Li, Z Lu, J Li, X Su, G Wang… - ACS …, 2023 - ACS Publications
Remote epitaxy (RE), substrate polarity can “penetrate” two-dimensional materials (2DMs)
and act on the epi-layer, showing a prospective universal growth strategy. However …

Raman Analysis of E2 (High) and A1 (LO) Phonon to the Stress-Free GaN Grown on Sputtered AlN/Graphene Buffer Layer

Y Zeng, J Ning, J Zhang, Y Jia, C Yan, B Wang… - Applied Sciences, 2020 - mdpi.com
The realization of high-speed and high-power gallium nitride (GaN)-based devices using
high-quality GaN/Aluminum nitride (AlN) materials has become a hot topic. Raman …

Exceptional Thermochemical Stability of Graphene on N-Polar GaN for Remote Epitaxy

J Choi, J Jeong, X Zhu, J Kim, BK Kang, Q Wang… - ACS …, 2023 - ACS Publications
In this study, we investigate the thermochemical stability of graphene on the GaN substrate
for metal–organic chemical vapor deposition (MOCVD)-based remote epitaxy. Despite …