It is generally known that the p-type AlGaN electron-blocking layer (EBL) can hinder hole
injection for near-ultraviolet light-emitting diodes (NUV-LEDs). Moreover, at the last quantum …

We report on the degradation mechanisms and dynamics of silicone encapsulated
ultraviolet A (UV-A) high-power light-emitting diodes (LEDs), with a peak wavelength of. The …

Violet electroluminescence is indispensable for wide color gamut and full color displays.
Exploring available, cheaper, and easier processing narrow-band violet light-emitting …

This work investigates the effect of current stress on InGaN/GaN multiple-quantum-well flip-
chip blue micro light-emitting diodes (μ-LEDs) with a mesa size of 30× 30 μm 2 and …

Herein, how the macroscopic characterizations can be utilized to extract information on the
defect level and crystal quality of the epitaxial layers of the light‐emitting diodes (LEDs) is …

The effect of O 2 plasma treatment on the electrical properties of Ti/Al (20/200 nm) contact to
N (Nitrogen)-face n-GaN of vertical light-emitting diodes (VLEDs) has been investigated by …

This study investigates the impact of gamma radiation on the electrical properties of
InAs/InGaAs quantum dot-based laser structures grown on both GaAs (Sample A) and Si …

The high-temperature-induced stress performance of GaN-based blue micro light emitting-
diode (micro-LED) arrays with a pixel size of 5× 5 μm2 (6 μm pitch) is studied, and …

This work investigates the size-dependent decrease in external quantum efficiency (EQE) of
various InGaN/GaN multiple-quantum-well flip-chip blue micro light-emitting diodes (μ …

Abstract We fabricate nonpolar InGaN/GaN single quantum-well based a-plane nanopillar
green light-emitting diode (LED). The top-down fabrication method was used for fabricating …