Recent advances in flexible solution-processed thin-film transistors for wearable electronics

LY Ma, N Soin, SN Aidit, FAM Rezali… - Materials Science in …, 2023 - Elsevier
Solution-processed thin-film transistors (TFTs) are widely explored due to their high potential
in flexible, cost-effective, large-area electronics, such as wearable electronics, sensor …

Advances in mobility enhancement of ITZO thin-film transistors: a review

F Chen, M Zhang, Y Wan, X Xu, M Wong… - Journal of …, 2023 - iopscience.iop.org
Indium-tin-zinc oxide (ITZO) thin-film transistor (TFT) technology holds promise for achieving
high mobility and offers significant opportunities for commercialization. This paper provides …

Combustion-assisted low-temperature ZrO2/SnO2 films for high-performance flexible thin film transistors

B Jang, J Kim, J Lee, G Park, G Yang, J Jang… - npj Flexible …, 2024 - nature.com
We developed high-performance flexible oxide thin-film transistors (TFTs) using SnO2
semiconductor and high-k ZrO2 dielectric, both formed through combustion-assisted sol-gel …

Performance enhancement of InSnZnO thin-film transistors by modifying the dielectric–semiconductor interface with colloidal quantum dots

S Chen, H Chen, C Xia, Z Sun - Nanoscale Advances, 2025 - pubs.rsc.org
Thin film transistors (TFTs) with InSnZnO (ITZO) and Al2O3 as the semiconductor and
dielectric layers, respectively, were investigated, aiming to elevate the device performance …

High Performance Indium-Tin-Zinc-Oxide Thin-Film Transistor with Hexamethyldisilazane Passivation

X Sun, JH Han, Z Xiao, S Chen, T Jin… - ACS Applied …, 2024 - ACS Publications
In this work, the fabrication and characterization of high performance indium-tin-zinc-oxide
(ITZO) thin-film transistors (TFTs) with hexamethyldisilazane (HMDS) passivation are …

Improved Performance and Bias Stability of Indium‐Tin‐Zinc‐Oxide Thin‐Film Transistors Enabled by an Oxygen‐Compensated Capping Layer

Z Xiao, J Jin, J Lee, G Choi, X Lin… - physica status solidi …, 2024 - Wiley Online Library
Herein, the effects of oxygen‐compensated capping layer (CCL) on the electrical
performance and stability of indium‐tin‐zinc‐oxide (ITZO) thin‐film transistors (TFTs) are …

High‐Performance Nd: AIZO/Al2O3 Dual Active Layer Design Without Thermal Annealing: High‐Speed Electron Transport and Defect Modification in Thin Film …

Y Fu, Z Liang, X Fu, M Li, R Yao, M Hou… - Advanced …, 2024 - Wiley Online Library
Flexible wearable electronics have been developing rapidly in recent years, and one of its
core devices, thin‐film transistor (TFT), is also attracting attention. Current TFT preparation …

Annealing Strategy Toward Achieving High-Performance Indium Tungsten Oxide Thin-Film Transistors by Equilibrating Oxygen Vacancy and Chemisorbed Oxygen

Z Chen, Y Yan, G Ding, Y Zhou, S Han… - IEEE Transactions on …, 2025 - ieeexplore.ieee.org
High-performance thin-film transistors (TFTs) are crucial for advanced displays. The use of
metal oxide (MO) as an excellent semiconductor to achieve high-mobility TFTs comes with …

Influence of radio-frequency magnetron sputtering power on electrical characteristics and positive bias stress stability of indium tin zinc oxide thin-film transistors

F Chen, Y Wan, P Balasubramanian… - Semiconductor Science …, 2024 - iopscience.iop.org
As the pursuit of high-quality display panels intensifies, the importance of high-performance
thin-film transistors (TFTs) becomes increasingly prominent. Indium tin zinc oxide (ITZO) …

[HTML][HTML] One-volt oxide based complementary circuit

J Wang, X Lin, Y Li, Q Xin, A Song, J Kim, J Jin… - AIP Advances, 2024 - pubs.aip.org
In low-power electronics, there is a substantial demand for high-performance p-type oxide
thin-film transistors (TFTs) that are capable of efficient operation at low voltages. In this …