Flexible optoelectronics have attracted much attention in recent years for their potential
applications in healthcare and wearable devices. Narrow bandgap (NBG) semiconductor …

We report an enhanced performance of flexible titanium nitride/germanium-tin (TiN/GeSn)
photodetectors (PDs) with an extended photodetection range based on sub-bandgap …

In the rapidly evolving era of information and intelligence, microelectronic devices are
pivotal across various fields, such as mobile devices, big data computing, electric vehicles …

In flexible electronic devices and sensor fabrication, substrate selection is essential as it
determines different parameters and techniques. This paper aims to find an efficient …

The 2 μm wavelength band (1800–2100 nm) emerges as a promising candidate for next‐
generation optical communication. As a result, silicon photonic platforms acquire great …

In this work, a viable method is demonstrated to realize high‐performance germanium (Ge)
photodetectors (PDs) on the nanostructured Ge surface, namely black Ge, formed by …

Semiconductor nanomembranes (NMs) have emerged as an attractive nanomaterial for
advanced electronic and photonic devices with attractive features such as transferability and …

Mid-infrared (MIR) flexible photodetectors (FPDs) constitute an essential element for
wearable applications, including health-care monitoring and biomedical detection …

The application of strain into GeSn alloys can effectively modulate the band structures, thus
creating novel electronic and photonic devices. Raman spectroscopy is a powerful tool for …

Near infrared (NIR) photodetectors (PDs) have attracted great attention for their applications
in the field of optical telecommunication. Ge is one of the most attractive materials for the …