Instabilities in semiconductor heterostructure growth can be exploited for the self-organized
formation of nanostructures, allowing for carrier confinement in all three spatial dimensions …

На основе анализа публикаций последних лет для системы Ge-на-Si приводятся
устоявшиеся представления о механизмах образования германиевых островков …

Three dimensional finite element computations are used to predict the formation of quantum
dot arrays in a strained epitaxial thin film system. The film is idealized as an initially planar …

We have applied atomic force microscopy and x-ray photoemission spectroscopy to the
study of SiGe intermixing in Ge/Si (100) self-assembled islands. We have quantified the …

The evolution of strained Ge/Si (001) islands during exposure to a Si flux was investigated
by scanning tunneling microscopy. Dome islands display appreciable shape changes at Si …

The generally accepted notions about the formation mechanisms for germanium islands with
nanometer-scale sizes in a Ge-on-Si system are reviewed on the basis of analysis of recent …

Ge islands were grown on Si (001) by ultrahigh vacuum magnetron sputter epitaxy and their
surface was investigated by scanning tunneling microscopy. The facets composing the …

An epitaxial thin film can undergo surface instability and break up into discrete islands. The
stress field and the interface interaction have profound effects on the dynamics of surface …

The current status of the research in the field of synthesis and application of silicon and
germanium-based nanostructures formed by the process of 3D island self-organization is …

Unimodal SiGe islands with dominant {111} facets were grown coherently on pit-patterned
Si (001) substrates by molecular beam epitaxy. With increasing Ge deposition, the {111} …