AbstractInAs/(GaIn) Sb superlattice photodiodes with a cutoff wavelength of 8.711 μm show
adynamic impedance of R0A= 1.5 kωcm2at 77 K and a responsivity of 2 A/W, corresponding …

In this paper the set of photoelectromagnetic methods for determination of recombination
and diffusion parameters of charge carriers in p-type mercury cadmium telluride epitaxial …

The electron minority carrier mobility is an important parameter because of its effect on the
diffusion length for determining the performance of semiconductor infrared detectors. The …

A magnetoresistance method is proposed which extracts both the growth direction mobility
and the planar mobility of an anisotropic thin film, such as a superlattice. A magnetic field …

В работе предлагается развитый для эпитаксиальных пленок кадмий–ртуть–теллур р-
типа фотоэлектромагнитный комплекс методов определения рекомбинационно …

The effect of the layer in a structure made in long-wavelength (x= 0.229) epilayers on the
zero-bias resistance-area product is theoretically analysed, and compared with a structure …

Excess carrier distribution and saturation current generated by a graded p‐n junction are
investigated, approximating the dopant profile by an exponential function. Analytical …

零偏压电阻一面积乘积(A) 和反向饱和电流密度是决定光电二极管性能的重要参数.
提出了一种对碲镉汞(Hg. 一CdTe) 光伏器件的少子扩散特性进行研究的有效方法 …

The analysis of R 0 A products as a function of magnetic field in n-on-p diodes using a
simple diffusion current model has previously been shown to yield both J ep/J total ratio (the …

The contribution of the graded region of implanted pn junctions is analysed using an
exponential profile. Though previously neglected, the authors have recently shown that this …