The observation of feeble ferroelectricity and giant piezoelectricity in doped II–VI ZnO binary
semiconductor has inspired a great deal of research interest, which could pave the way to …

The polar nature of the wurtzite crystalline structure of GaN and ZnO results in the existence
of a spontaneous electric polarization within these materials and their associated alloys (Ga …

Oxygen vacancy (VO) is a common native point defect that plays crucial roles in determining
the physical and chemical properties of metal oxides such as ZnO. However, fundamental …

ZnO is a wide‐bandgap (3.37 eV at room temperature) oxide semiconductor that is attractive
for its great potential in short‐wavelength optoelectronic devices, in which high quality films …

A two-dimensional electron gas was observed in Zn polar Zn Mg O∕ Zn O (ZnMgO on ZnO)
heterostructures grown by radical source molecular beam epitaxy. The electron mobility of …

We demonstrate a simple and inexpensive method of surface polarity control of ZnO grown
by pulsed laser deposition (PLD). The polarity control is achieved in a straightforward way …

Nanomechanical characterization of vertical well-aligned single-crystal ZnO nanowires on
ZnO: Ga/glass templates was performed by nanoindentation technique. The buckling loads …

The crystal orientation and piezoelectric properties of solution grown ZnO nanorods on Ag
films were measured by quantitative piezoelectric force microscopy (PFM). The polarity of …

Controlling the growth of zinc oxide nanowires is necessary to optimize the performance of
nanowire-based devices such as photovoltaic solar cells, nano-generators, or light-emitting …

The crystallographic polarity of ZnO epilayers was determined by x-ray diffraction (XRD)
using anomalous dispersion near the Zn K edge. The method is not destructive and is …